VN0808L-G Supertex, VN0808L-G Datasheet

MOSFET Small Signal 80V 4Ohm

VN0808L-G

Manufacturer Part Number
VN0808L-G
Description
MOSFET Small Signal 80V 4Ohm
Manufacturer
Supertex
Datasheet

Specifications of VN0808L-G

Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4 Ohm @ 10 V
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
0.3 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features
Applications
Ordering Information
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Distance of 1.6mm from case for 10 seconds.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
VN0808
Device
ISS
and fast switching speeds
Package Option
VN0808L-G
TO-92
N-Channel Enhancement-Mode
Vertical DMOS FET
1235 Bordeaux Drive, Sunnyvale, CA 94089
-55
O
C to +150
300
Value
BV
BV
±30V
DGS
DSS
O
O
C
C
BV
DSS
Pin Configuration
Product Marking
80
(V)
/BV
General Description
This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities
of bipolar transistors and the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
DGS
Package may or may not include the following marks: Si or
Si V N
YYWW
0 8 0 8 L
Tel: 408-222-8888
SOURCE
R
YY = Year Sealed
WW = Week Sealed
(max)
DS(ON)
4.0
(Ω)
TO-92 (L)
TO-92 (L)
= “Green” Packaging
www.supertex.com
DRAIN
GATE
VN0808
I
(min)
D(ON)
1.5
(A)

Related parts for VN0808L-G

VN0808L-G Summary of contents

Page 1

... Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Package Option Device TO-92 VN0808 VN0808L-G -G indicates package is RoHS compliant (‘Green’) Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature Soldering temperature* Absolute Maximum Ratings are those values beyond which damage to the device may occur ...

Page 2

... V = ±15V 0V 80V GS DS µ 0.8 Max Rating, 500 0V 125° 10V 4.0 Ω 10V 1. mmho V = 10V 500mA 0V 25V 1.0MHz 25V 1.0A 25Ω GEN - 0V 350mA PULSE GENERATOR OUTPUT R GEN D.U.T. INPUT ● Tel: 408-222-8888 ● www.supertex.com VN0808 I † DR DRM (A) 1 10V ...

Page 3

... Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship ...

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