TN5335K1-G Supertex, TN5335K1-G Datasheet - Page 2

• Manufacturer Part Number: TN5335K1-G
• Description: MOSFET Small Signal 350V 15Ohm
• Manufacturer: Supertex

Specifications of TN5335K1-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15 Ohm @ 10 V
• Drain-source Breakdown Voltage: 350 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.11 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Notes:
Electrical Characteristics
Notes:
ΔR
† I
‡ Mounted on FR5 Board, 25mm x 25mm x 1.57mm.
ΔV
R
BV
V
1.
2.
Sym
t
I
C
C
t
C
d(OFF)
I
I
G
V
TO-236AB (SOT-23)
D(ON)
DS(ON)
TO-243AA (SOT-89)
d(ON)
GS(th)
GSS
DSS
DS(ON)
t
OSS
RSS
t
D
GS(th)
t
ISS
SD
rr
DSS
FS
r
f
(continuous) is limited by max rated T
All D.C. parameters 100% tested at 25
All A.C. parameters sample tested.
Package
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
Gate body leakage
Zero gate voltage drain current
On-state drain current
Static drain-to-source on-state resistance
Change in R
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
Parameter
GS(th)
DS(ON)
with temperature
with temperature
(continuous)
●
(mA)
110
230
I
j
1235 Bordeaux Drive, Sunnyvale, CA 94089
D
.
O
(T
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
A
= 25
†
O
C unless otherwise specified)
(pulsed)
0.8
1.3
(A)
I
D
Min
350
300
750
125
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Power Dissipation
2
@T
Typ
800
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.36
A
1.6
(W)
= 25
‡
Max
O
-4.5
100
110
2.0
1.0
1.0
5.0
1.0
1.8
10
15
15
15
60
22
20
15
25
25
C
-
-
-
-
-
●
Tel: [phone]
mV/
mmho V
Units
%/
mA
mA
nA
µA
nA
pF
ns
ns
Ω
V
V
V
O
O
C
(
C V
O
200
C/W)
θ
15
jc
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
I
R
V
V
Conditions
D
GS
GS
GS
GS
GS
GS
DS
GS
GS
GS
GS
GS
GS
GS
GS
DS
GS
DS
DD
GS
GS
GEN
= 150mA,
= 0.8 Max Rating,
= 25V, I
= 25V,
●
= 0V, I
= V
= V
= ± 20V, V
= 0V, V
= 0V, V
= 0V, T
= 0V, V
= 4.5V, V
= 10V, V
= 3.0V, I
= 4.5V, I
= 10V, I
= 4.5V, I
= 0V,
= 25V,
= 0V, I
= 0V, I
= 25Ω
www.supertex.com
(
O
350
DS
DS
78
C/W)
θ
, I
, I
ja
‡
D
SD
SD
A
D
D
DS
DS
DS
D
D
= 100µA
= 1.0mA
= 1.0mA
D
D
D
= 125°C
DS
= 200mA
= 200mA
DS
= 200mA
= 200mA
= 100V
= Max Rating
= 330V
= 20mA
= 150mA
= 150mA
DS
= 25V
= 25V
= 0V
(mA)
230
110
I
DR
†
TN5335
I
0.8
1.3
(A)
DRM