LND150N3-G Supertex, LND150N3-G Datasheet - Page 5

• Manufacturer Part Number: LND150N3-G
• Description: MOSFET Small Signal 500V 1KOhm
• Manufacturer: Supertex
• Type: Power MOSFETr

Specifications of LND150N3-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1000 Ohm @ 0 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 740 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Depletion
• Drain-source On-res: 1000Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 30mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3-Lead TO-236AB (SOT-23) Package Outline (K1)
2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch
JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO236ABK1, Version C041309.
Dimension
(mm)
A
Symbol
A2
A1
NOM
MAX
MIN
1
0.89
1.12
A
Side View
-
Top View
e
3
e1
D
0.01
0.10
A1
●
-
1235 Bordeaux Drive, Sunnyvale, CA 94089
2
0.88
0.95
1.02
A2
b
0.30
0.50
b
-
E1 E
Seating
A
Plane
A
2.80
2.90
3.04
D
5
2.10
2.64
E
-
●
1.20
1.30
1.40
E1
Tel: [phone]
View A - A
BSC
0.95
e
View B
L1
L
BSC
1.90
●
e1
www.supertex.com
0.25
0.20
0.50
0.60
L
†
View B
Seating
Gauge
0.54
REF
Plane
Plane
L1
LND150
0
8
θ
-
O
O