VN2210N3-G Supertex, VN2210N3-G Datasheet - Page 4

• Manufacturer Part Number: VN2210N3-G
• Description: MOSFET Small Signal 100V 0.35Ohm
• Manufacturer: Supertex

Specifications of VN2210N3-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.35 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.2 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
500
375
250
125
1.1
1.0
0.9
10
Supertex inc.
8
6
4
2
0
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
V
DS
BV
= 25
2
DSS
O
Transfer Characteristics
10
C
0
Variation with Temperature
f = 1.0MHz
T
A
4
V
= -55
V
GS
T
DS
j
20
50
(volts)
(
(volt)
O
O
C
C)
150
●
6
O
1235 Bordeaux Drive, Sunnyvale, CA 94089
C
25
100
30
O
C
8
(cont.)
C
C
C
ISS
OSS
RSS
150
10
40
4
1.0
0.8
0.6
0.4
0.2
1.2
1.1
1.0
0.9
0.8
0.7
10
0
8
6
4
2
0
-50
0
0
●
V
GS
Tel: [phone]
Gate Drive Dynamic Characteristics
and RV
On-Resistance vs. Drain Current
300 pF
4
2
V
0
GS
Q
DS
= 5.0V
G
Variation with Temperature
(nanocoulombs)
I
D
8
4
(amperes)
900 pF
T
j
R
(
50
O
●
DS(ON)
C)
www.supertex.com
12
V
V
6
@ 10V, 4.0A
GS(th)
DS
V
= 10V
GS
V
@ 10mA
DS
= 10V
100
= 40V
16
8
150
20
10
VN2210
2.0
1.6
1.2
0.8
0.4