2N7008-G Supertex, 2N7008-G Datasheet

MOSFET Small Signal 60V 7.5Ohm

2N7008-G

Manufacturer Part Number
2N7008-G
Description
MOSFET Small Signal 60V 7.5Ohm
Manufacturer
Supertex
Datasheet

Specifications of 2N7008-G

Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7.5 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
0.23 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N7008-G
Manufacturer:
MICROCHIP
Quantity:
12 000
Features
Applications
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Ordering Information
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature
Distance of 1.6mm from case for 10 seconds.
2N7008-G
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Complementary N- and P-Channel devices
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Device
ISS
and fast switching speeds
Package Option
*
TO-92
N-Channel Enhancement-Mode
Vertical DMOS FETs
1235 Bordeaux Drive, Sunnyvale, CA 94089
-55°C to +150°C
BV
DSS
(V)
60
/BV
+300°C
Value
BV
BV
±30V
DGS
DGS
DSS
General Description
The Supertex 2N7008 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Pin Configuration
Product Marking
R
(max)
DS(ON)
7.5
(Ω)
7 0 0 8
Y Y W W
Tel: 408-222-8888
2 N
I
(min)
(mA)
500
D(ON)
YY = Year Sealed
WW = Week Sealed
DRAIN
TO-92
TO-92
= “Green” Packaging
www.supertex.com
SOURCE
GATE
2N7008

Related parts for 2N7008-G

2N7008-G Summary of contents

Page 1

... Power supply circuits ► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Device Package Option 2N7008-G TO-92 -G indicates package is RoHS compliant (‘Green’) Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature ...

Page 2

... 125 10V 7 5.0V Ω 7 10V mmho V = 10V 0V 1.0MHz 5 30V 25Ω 20 GEN 1 0V PULSE GENERATOR R GEN INPUT ● Tel: 408-222-8888 ● www.supertex.com 2N7008 I DRM (A) 1.3 = -10µA = 250µ 50V = 50V, ≥ 2.0V DS DS(ON) = 50mA D = 500mA = 200mA = 25V, = 200mA, = 150mA OUTPUT D.U.T. ...

Page 3

... No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com. ©2008 All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-2N7008 B091008 D 1 ...

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