VP0808L-G Supertex, VP0808L-G Datasheet

VP0808L-G

Manufacturer Part Number

VP0808L-G

Description

MOSFET Small Signal 80V 5Ohm

Manufacturer

Supertex

Datasheet

1.VP0808L-G.pdf (3 pages)

Specifications of VP0808L-G

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

5 Ohm @ 10 V

Drain-source Breakdown Voltage

80 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

0.28 A

Power Dissipation

1000 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Features

►

Applications

►

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to

the device may occur. Functional operation under these conditions is not

implied. Continuous operation of the device at the absolute rating level

may affect device reliability. All voltages are referenced to device ground.

Ordering Information

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Soldering temperature*

-G indicates package is RoHS compliant (‘Green’)

Distance of 1.6mm from case for 10 seconds.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

High input impedance and high gain

Excellent thermal stability

Integral source-to-drain diode

Motor controls

Converters

Ampliﬁers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

VP0808

Device

ISS

and fast switching speeds

Package Option

●

P-Channel Enhancement-Mode

Vertical DMOS FETs

1235 Bordeaux Drive, Sunnyvale, CA 94089

VP0808L-G

TO-92

-55°C to +150°C

+300°C

Value

±30V

DGS

DSS

General Description

The Supertex VP0808 is an enhancement-mode (normally-

off) transistor that utilizes a vertical DMOS structure

and Supertex’s well-proven silicon-gate manufacturing

process. This combination produces a device with the

power handling capabilities of bipolar transistors, and the

high input impedance and positive temperature coefﬁcient

inherent in MOS devices. Characteristic of all MOS

structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

Pin Conﬁguration

Product Marking

Package may or may not include the following marks: Si or

DSS

-80

(V)

/BV

Y Y W W

0 8 0 8

●

Si VP

DGS

Tel: 408-222-8888

SOURCE

YY = Year Sealed

WW = Week Sealed

TO-92 (L)

(max)

DRAIN

DS(ON)

5.0

(Ω)

●

= “Green” Packaging

GATE

www.supertex.com

VP0808

(min)

-1.1

D(ON)

(A)

Related parts for VP0808L-G

VP0808L-G Summary of contents

Page 1

... Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Package Option BV DSS TO-92 VP0808L-G Pin Conﬁguration Value BV DSS BV Product Marking DGS ±30V -55° ...

Page 2

... V = ±20V - 0V µ 0.8 Max Rating, - -500 0V 125 -10V 5.0 Ω -10V mmho V = -10V 150 -25V 1.0MHz - -25V -500mA 25Ω GEN - 0V GEN D.U.T. Output INPUT ● Tel: 408-222-8888 ● www.supertex.com VP0808 I DRM (mA) -3.0 = -1.0mA = Max Rating -15V DS = -1.0A = -500mA = -900mA ...

Page 3

... Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship ...

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