VN3205N8-G Supertex, VN3205N8-G Datasheet

VN3205N8-G

Manufacturer Part Number

VN3205N8-G

Description

MOSFET Small Signal 50V 0.3Ohm

Manufacturer

Supertex

Datasheet

1.VN3205P-G.pdf (8 pages)

Specifications of VN3205N8-G

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.3 Ohm @ 10 V

Drain-source Breakdown Voltage

50 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

1.5 A

Power Dissipation

1600 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOT-89

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current page: 1 of 8
Download datasheet (700Kb)

Absolute Maximum Ratings

Features

►

Applications

►

-G indicates package is RoHS compliant (‘Green’)

* MIL visual screening available.

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Ordering Information

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Soldering temperature*

VN3205

Distance of 1.6mm from case for 10 seconds.

Device

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Motor controls

Converters

Ampliﬁers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

ISS

and fast switching speeds

VN3205N3-G

TO-92

VN3205P-G

●

14-Lead

N-Channel Enhancement-Mode

Vertical DMOS FETs

1235 Bordeaux Drive, Sunnyvale, CA 94089

PDIP

Package Options

-55°C to +150°C

VN3205N8-G

+300°C

TO-243AA

(SOT-89)

Value

±20V

DGS

DSS

General Description

This enhancement-mode (normally-off) transistor utilizes a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces a device with

the power handling capabilities of bipolar transistors and with

the high input impedance and positive temperature coefﬁcient

inherent in MOS devices. Characteristic of all MOS structures,

this device is free from thermal runaway and thermally induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Pin Conﬁgurations

VN3205ND

SOURCE

TO-92 (N3)

Die*

●

Tel: 408-222-8888

DRAIN

GATE

14-Lead PDIP (P)

N/C

DSS

(V)

/BV

●

www.supertex.com

DGS

TO-243AA (SOT-89) (N8)

N/C

DRAIN

max

DS(ON)

0.3

(Ω)

GATE

VN3205

DRAIN

SOURCE

max

2.4

GS(th)

(V)

Related parts for VN3205N8-G

VN3205N8-G Summary of contents

Page 1

... Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Package Options 14-Lead TO-243AA PDIP (SOT-89) VN3205N8-G VN3205ND Pin Conﬁgurations Value BV DSS BV DGS ±20V -55° ...

Page 2

... Max Rating 0.8 Max Rating 10V 0. 4.5V 0. 4.5V Ω 10V 0 10V 0.85 1 10V 1.5 - mho V = 25V ● Tel: 408-222-8888 ● www.supertex.com VN3205 I I † DR DRM (A) (A) 1.2 8.0 1.5 8.0 1.5 8.0 = 10mA 10mA 10mA 125 5. 1. 0.75A 2.0A D ...

Page 3

... C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) O 90% t (OFF d(OFF) f 10% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 3 Max Units Conditions 300 120 25V 1.0MHz 25V 2.0A 10Ω GEN - PULSE GENERATOR R GEN INPUT ● Tel: 408-222-8888 ● www.supertex.com VN3205 = 1. 1. OUTPUT D.U.T. ...

Page 4

... Power Dissipation vs. Case Temperature 3.2 P-DIP 2.8 2.4 2.0 TO-243AA ( T = 25° 1.6 1.2 TO-92 0.8 0 100 125 Thermal Response Characteristics 1.0 0.8 TO-243AA 0 25° 1.6W D 0.4 0.2 TO- 25° 0.001 0.01 0.1 1.0 t (seconds) p ● Tel: 408-222-8888 ● www.supertex.com VN3205 GS 10V 150 10 ...

Page 5

... Bordeaux Drive, Sunnyvale, CA 94089 5 On-Resistance vs. Drain Current 10V (amperes and R Variation with Temperature (th 10V, 3A DS(ON 1mA GS(th) - 100 Gate Drive Dynamic Characteristics 10V 40V DS 6 325 215 (nanocoulombs) G ● Tel: 408-222-8888 ● www.supertex.com VN3205 20 1.6 1.4 1.2 1.0 0.8 0.6 150 5 ...

Page 6

... Seating Plane E1 1 Symbol A MIN .170 Dimensions NOM - (inches) MAX .210 JEDEC Registration TO-92. * This dimension is not speciﬁed in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009 Front View Bottom View ...

Page 7

... TO-243AA (SOT-89) Package Outline (N8) b Symbol A b MIN 1.40 0.44 Dimensions NOM - (mm) MAX 1.60 0.56 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. † This dimension differs from the JEDEC drawing Drawings not to scale. Supertex Doc. #: DSPD-3TO243AAN8, Version E051509 0.36 0.35 4.40 1. 0.48 0.44 4.60 1.83 ● ...

Page 8

... Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship ...

Related keywords

VN3205N8-G datasheet
VN3205N8-G data sheet
VN3205N8-G pdf datasheet
VN3205N8-G component
VN3205N8-G part
VN3205N8-G distributor
VN3205N8-G RoHS
VN3205N8-G datasheet download