VP2110K1-G Supertex, VP2110K1-G Datasheet - Page 4

• Manufacturer Part Number: VP2110K1-G
• Description: MOSFET Small Signal 100V 12Ohm
• Manufacturer: Supertex

Specifications of VP2110K1-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 12 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.12 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
-1.1
-1.0
-0.9
-1.0
-0.8
-0.6
-0.4
-0.2
100
75
50
25
0
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
BV
V
DS
DSS
-2
Transfer Characteristics
-10
= -25V
0
Variation with Temperature
f = 1MHz
V
V
GS
-4
DS
T
(volts)
j
-20
50
(°C)
(volts)
●
-6
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
-30
-8
(cont.)
C
C
RSS
ISS
150
-10
-40
4
1.4
1.2
1.0
0.8
0.6
-10
20
16
12
-8
-6
-4
-2
8
4
0
0
-50
0
0
V
●
(th)
Gate Drive Dynamic Characteristics
Tel: [phone]
On-Resistance vs. Drain Current
and R
35 pF
-0.2
R
V
0
V
DS(ON)
DS
Q
GS
DS
G
I
= -10V
D
= -5V
Variation with Temperature
(nanocoulombs)
-0.4
(amperes)
@ -10V, 0.5A
T
j
101 pF
1.0
50
(°C)
V
●
-0.6
DS
www.supertex.com
=
V
-40V
(th)
100
V
GS
-0.8
@ 1mA
= -10V
-1.0
150
2.0
2.0
1.6
1.2
0.8
0.4
0
VP2110