BU52012HFV-TR Rohm Semiconductor, BU52012HFV-TR Datasheet - Page 12
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BU52012HFV-TR
Manufacturer Part Number
BU52012HFV-TR
Description
Industrial Hall Effect / Magnetic Sensors MONO DETECTION SENSOR; 1.65-3.3V
Manufacturer
Rohm Semiconductor
Series
-r
Type
Unipolar Switchr
Datasheets
1.BU52002GUL-E2.pdf
(20 pages)
2.BU52012HFV-TR.pdf
(6 pages)
3.BU52002GUL-E2.pdf
(15 pages)
Specifications of BU52012HFV-TR
Operational Type
Unipolar
Operating Supply Voltage
1.8 V or 2.5 V
Current Rating
3.5 uA
Operating Point Min/max
3 mT to 5 mT
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Maximum Output Current
0.5 mA
Package / Case
HVSOF
Hall Effect Type
Unipolar
Output Current
500µA
Power Dissipation Pd
536mW
Sensor Case Style
HVSOF
No. Of Pins
5
Supply Voltage Range
1.65V To 3.3V
Operating Temperature Range
-40°C To +85°C
Svhc
No SVHC
Sensing Range
5mT Trip, 0.6mT Release
Voltage - Supply
1.65 V ~ 3.3 V
Current - Supply
5.5µA
Current - Output (max)
±0.5mA
Output Type
Digital, Open Collector
Features
Regulated Voltage
Operating Temperature
-40°C ~ 85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BU52012HFV-TR
Manufacturer:
ROHM/罗姆
Quantity:
20 000
●Description of Operations
© 2010 ROHM Co., Ltd. All rights reserved.
BU52002GUL,BU52003GUL,BU52012NVX,BU52012HFV,BU52013HFV
www.rohm.com
(Offset Cancelation)
(Micropower Operation)
BU52012HFV, BU52013HFV
PIN No. PIN NAME
I
DD
HALL
ELEMENT
1
2
3
4
5
×
GND
VDD
OUT
N.C.
N.C.
B
GND
Fig.40
V
Startup time
×
DD
Period
TIMING LOGIC
Standby
Fig.39
I
POWER SUPPLY
FUNCTION
GROUND
OUTPUT
+
VDD
-
Hall Voltage
4
Fig.38
OPEN or Short to GND.
OPEN or Short to GND.
t
COMMENT
12/19
The unipolar detection Hall IC adopts an intermittent operation
method to save energy. At startup, the Hall elements, amp,
comparator and other detection circuit power ON and magnetic
detection begins. During standby, the detection circuits power
OFF, thereby reducing current consumption. The detection results
are held while standby is active, and then output.
The Hall elements form an equivalent Wheatstone (resistor)
bridge circuit. Offset voltage may be generated by a differential in
this bridge resistance, or can arise from changes in resistance
due to package or bonding stress. A dynamic offset cancellation
circuit is employed to cancel this offset voltage.
When Hall elements are connected as shown in Fig. 40 and a
magnetic field is applied perpendicular to the Hall elements,
voltage is generated at the mid-point terminal of the bridge. This
is known as Hall voltage.
Dynamic cancellation switches the wiring (shown in the figure) to
redirect the current flow to a 90˚ angle from its original path, and
thereby cancels the Hall voltage.
The magnetic signal (only) is maintained in the sample/hold
circuit during the offset cancellation process and then released.
Reference period: 50ms (MAX100ms)
Reference startup time: 24µs
5
2
OUT
The CMOS output terminals enable direct connection to
the PC, with no external pull-up resistor required.
GND
1
5
Surface
2
0.1µF
Adjust the bypass capacitor value as
necessary, according to voltage noise
conditions, etc.
4
3
Technical Note
2010.08 - Rev.C
4
3
Reverse
2
5
1