BU52012HFV-TR Rohm Semiconductor, BU52012HFV-TR Datasheet - Page 12

• Manufacturer Part Number: BU52012HFV-TR
• Description: Industrial Hall Effect / Magnetic Sensors MONO DETECTION SENSOR; 1.65-3.3V
• Manufacturer: Rohm Semiconductor
• Series: -r
• Type: Unipolar Switchr

Specifications of BU52012HFV-TR

• Operational Type: Unipolar
• Operating Supply Voltage: 1.8 V or 2.5 V
• Current Rating: 3.5 uA
• Operating Point Min/max: 3 mT to 5 mT
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Maximum Output Current: 0.5 mA
• Package / Case: HVSOF
• Hall Effect Type: Unipolar
• Output Current: 500µA
• Power Dissipation Pd: 536mW
• Sensor Case Style: HVSOF
• No. Of Pins: 5
• Supply Voltage Range: 1.65V To 3.3V
• Operating Temperature Range: -40°C To +85°C
• Svhc: No SVHC
• Sensing Range: 5mT Trip, 0.6mT Release
• Voltage - Supply: 1.65 V ~ 3.3 V
• Current - Supply: 5.5µA
• Current - Output (max): ±0.5mA
• Output Type: Digital, Open Collector
• Features: Regulated Voltage
• Operating Temperature: -40°C ~ 85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

●Description of Operations
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(Offset Cancelation)
(Micropower Operation)
BU52012HFV, BU52013HFV
PIN No. PIN NAME
I
DD
HALL
ELEMENT
1
2
3
4
5
×
GND
VDD
OUT
N.C.
N.C.
B
GND
Fig.40
V
Startup time
×
DD
Period
TIMING LOGIC
Standby
Fig.39
I
POWER SUPPLY
FUNCTION
GROUND
OUTPUT
＋
VDD
－
Hall Voltage
4
Fig.38
OPEN or Short to GND.
OPEN or Short to GND.
t
COMMENT
12/19
The unipolar detection Hall IC adopts an intermittent operation
method to save energy. At startup, the Hall elements, amp,
comparator and other detection circuit power ON and magnetic
detection begins. During standby, the detection circuits power
OFF, thereby reducing current consumption. The detection results
are held while standby is active, and then output.
The Hall elements form an equivalent Wheatstone (resistor)
bridge circuit. Offset voltage may be generated by a differential in
this bridge resistance, or can arise from changes in resistance
due to package or bonding stress. A dynamic offset cancellation
circuit is employed to cancel this offset voltage.
When Hall elements are connected as shown in Fig. 40 and a
magnetic field is applied perpendicular to the Hall elements,
voltage is generated at the mid-point terminal of the bridge. This
is known as Hall voltage.
Dynamic cancellation switches the wiring (shown in the figure) to
redirect the current flow to a 90˚ angle from its original path, and
thereby cancels the Hall voltage.
The magnetic signal (only) is maintained in the sample/hold
circuit during the offset cancellation process and then released.
Reference period: 50ms (MAX100ms)
Reference startup time: 24µs
5
2
OUT
The CMOS output terminals enable direct connection to
the PC, with no external pull-up resistor required.
GND
1
5
Surface
2
0.1µF
Adjust the bypass capacitor value as
necessary, according to voltage noise
conditions, etc.
4
3
Technical Note
2010.08 - Rev.C
4
3
Reverse
2
5
1