BU52012HFV-TR Rohm Semiconductor, BU52012HFV-TR Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/5/572/rohm_semiconductor_sml.jpg)
BU52012HFV-TR
Manufacturer Part Number
BU52012HFV-TR
Description
Industrial Hall Effect / Magnetic Sensors MONO DETECTION SENSOR; 1.65-3.3V
Manufacturer
Rohm Semiconductor
Series
-r
Type
Unipolar Switchr
Datasheets
1.BU52002GUL-E2.pdf
(20 pages)
2.BU52012HFV-TR.pdf
(6 pages)
3.BU52002GUL-E2.pdf
(15 pages)
Specifications of BU52012HFV-TR
Operational Type
Unipolar
Operating Supply Voltage
1.8 V or 2.5 V
Current Rating
3.5 uA
Operating Point Min/max
3 mT to 5 mT
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Maximum Output Current
0.5 mA
Package / Case
HVSOF
Hall Effect Type
Unipolar
Output Current
500µA
Power Dissipation Pd
536mW
Sensor Case Style
HVSOF
No. Of Pins
5
Supply Voltage Range
1.65V To 3.3V
Operating Temperature Range
-40°C To +85°C
Svhc
No SVHC
Sensing Range
5mT Trip, 0.6mT Release
Voltage - Supply
1.65 V ~ 3.3 V
Current - Supply
5.5µA
Current - Output (max)
±0.5mA
Output Type
Digital, Open Collector
Features
Regulated Voltage
Operating Temperature
-40°C ~ 85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BU52012HFV-TR
Manufacturer:
ROHM/罗姆
Quantity:
20 000
© 2010 ROHM Co., Ltd. All rights reserved.
BU52002GUL,BU52003GUL,BU52012NVX,BU52012HFV,BU52013HFV
www.rohm.com
BU52012HFV (Unless otherwise specified, V
Power Supply Voltage
Operate Point
Release Point
Hysteresis
Period
Output High Voltage
Output Low Voltage
Supply Current 1
Supply Current
During Startup Time 1
Supply Current
During Standby Time 1
Supply Current 2
Supply Current
During Startup Time 2
Supply Current
During Standby Time 2
※10. B = Magnetic flux density
1mT=10Gauss
Positive (“+”) polarity flux is defined as the magnetic flux from south pole which is direct toward to the branded face of the sensor.
After applying power supply, it takes one cycle of period (T
Radiation hardiness is not designed.
Parameter
Symbol
I
I
I
I
I
I
DD1(AVG)
DD2(AVG)
DD1(DIS)
DD2(DIS)
DD1(EN)
DD2(EN)
B
B
B
V
V
V
T
hysS
opS
rpS
DD
OH
OL
P
V
DD
DD
Min.
1.65
0.6
=1.80V, Ta=25℃)
-
-
-
-
-
-
-
-
-
-
-0.2
P
) to become definite output.
Limits
Typ.
1.80
5/19
3.0
2.1
0.9
3.5
2.8
1.8
6.5
4.5
4.0
50
-
-
Max.
3.30
100
5.0
0.2
5.5
9
-
-
-
-
-
-
-
Unit
mT
mT
mT
mA
mA
ms
µA
µA
µA
µA
V
V
V
B<B
I
B
I
V
V
During Startup Time Value
V
During Standby Time Value
V
V
During Startup Time Value
V
During Standby Time Value
OUT
OUT
opS
DD
DD
DD
DD
DD
DD
=1.8V, Average
=1.8V,
=1.8V,
=2.7V, Average
=2.7V,
=2.7V,
<B
rpS
=-0.5mA
=+0.5mA
Conditions
Technical Note
2010.08 - Rev.C
※
※
10
10