BUK9Y27-40B,115 NXP Semiconductors, BUK9Y27-40B,115 Datasheet - Page 8

• Manufacturer Part Number: BUK9Y27-40B,115
• Description: MOSFET N-CH 40V 34A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y27-40B,115

• Input Capacitance (ciss) @ Vds: 959pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 2.3V @ 1mA
• Gate Charge (qg) @ Vgs: 11nC @ 5V
• Power - Max: 59.4W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5528-2

NXP Semiconductors
BUK9Y27-40B
Product data sheet
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Drain-source on-state resistance as a function
V
R
(mΩ)
GS(th)
DSon
(V)
2.5
2.0
1.5
1.0
0.5
0.0
40
30
20
10
−60
junction temperature
of gate-source voltage; typical values.
0
0
4
60
8
max
min
typ
120
12
All information provided in this document is subject to legal disclaimers.
003aac877
V
003aab986
T
j
GS
(°C)
(V)
180
16
Rev. 04 — 7 April 2010
Fig 11. Sub-threshold drain current as a function of
Fig 13. Normalized drain-source on-state resistance
(A)
I
10
10
10
10
10
10
a
D
2.4
1.6
0.8
−1
−2
−3
−4
−5
−6
0
−60
gate-source voltage
factor as a function of junction temperature
0
N-channel TrenchMOS logic level FET
0
min
1
BUK9Y27-40B
60
typ
2
120
max
V
© NXP B.V. 2010. All rights reserved.
GS
003aab987
T
j
(V)
(°C)
03nb25
180
3
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