PSMN5R8-30LL,115 NXP Semiconductors, PSMN5R8-30LL,115 Datasheet - Page 8

• Manufacturer Part Number: PSMN5R8-30LL,115
• Description: MOSFET N-CH 30V QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN5R8-30LL,115

• Input Capacitance (ciss) @ Vds: 1316pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Power - Max: 55W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5593-2

NXP Semiconductors
PSMN5R8-30LL
Product data sheet
Fig 11. Sub-threshold drain current as a function of
Fig 13. Normalized drain-source on-state resistance
10
10
10
10
10
10
(A)
a
I
1.5
0.5
D
-1
-2
-3
-4
-5
-6
2
1
0
−60
gate-source voltage
factor as a function of junction temperature
0
0
min
1
60
typ
2
120
V
All information provided in this document is subject to legal disclaimers.
GS
003aab271
T
max
j
(V)
( ° C)
03aa27
180
Rev. 2 — 18 August 2010
3
N-channel QFN3333 30 V 5.8 mΩ logic level MOSFET
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate charge waveform definitions
(mΩ)
R
DSon
25
20
15
10
5
0
of drain current; typical values
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
V
GS
(V) = 2.4
Q
GS1
20
I
Q
D
PSMN5R8-30LL
GS
2.6
Q
GS2
Q
G(tot)
Q
GD
40
2.8
© NXP B.V. 2010. All rights reserved.
I
003aae446
003aaa508
D
3.0
(A)
4.5
10
60
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