BUK9Y19-75B,115 NXP Semiconductors, BUK9Y19-75B,115 Datasheet - Page 8

• Manufacturer Part Number: BUK9Y19-75B,115
• Description: MOSFET N-CH 75V 48.2A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y19-75B,115

• Input Capacitance (ciss) @ Vds: 3096pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 48.2A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 30nC @ 5V
• Power - Max: 106W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5526-2

NXP Semiconductors
BUK9Y19-75B
Product data sheet
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
2.5
1.5
0.5
a
3
2
1
0
2
1
0
-60
-60
junction temperature
factor as a function of junction temperature
-20
0
20
max
typ
min
60
60
100
120
All information provided in this document is subject to legal disclaimers.
140
003aad557
T
j
03nq03
T
(°C)
j
(°C)
180
180
Rev. 04 — 13 April 2010
Fig 11. Sub-threshold drain current as a function of
Fig 13. Drain-source on-state resistance as a function
R
(mΩ)
(A)
I
DSON
D
10
10
10
10
10
10
20
18
16
14
12
-1
-2
-3
-4
-5
-6
gate-source voltage
of gate-source voltage; typical values
0
0
N-channel TrenchMOS logic level FET
min
5
1
BUK9Y19-75B
typ
max
10
2
V
© NXP B.V. 2010. All rights reserved.
V
GS
GS
003aad565
003aad095
(V)
(V)
15
3
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