BUK7Y35-55B,115 NXP Semiconductors, BUK7Y35-55B,115 Datasheet - Page 11
BUK7Y35-55B,115
Manufacturer Part Number
BUK7Y35-55B,115
Description
MOSFET N-CH 55V 28.43A LFPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7Y35-55B115.pdf
(14 pages)
Specifications of BUK7Y35-55B,115
Input Capacitance (ciss) @ Vds
781pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
35 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
28.43A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
13.1nC @ 10V
Power - Max
60W
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5520-2
NXP Semiconductors
8. Revision history
Table 7.
BUK7Y35-55B
Product data sheet
Document ID
BUK7Y35-55B_4
Modifications:
BUK7Y35-55B_3
Revision history
Release date
20100407
20100217
•
Status changed from objective to product.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Objective data sheet
Rev. 04 — 7 April 2010
Change notice
-
-
N-channel TrenchMOS standard level FET
BUK7Y35-55B
BUK7Y35-55B_2
Supersedes
BUK7Y35-55B_3
© NXP B.V. 2010. All rights reserved.
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