BUK7Y54-75B,115 NXP Semiconductors, BUK7Y54-75B,115 Datasheet

MOSFET N-CH 75V 21.4A LFPAK

BUK7Y54-75B,115

Manufacturer Part Number
BUK7Y54-75B,115
Description
MOSFET N-CH 75V 21.4A LFPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK7Y54-75B,115

Input Capacitance (ciss) @ Vds
803pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
54 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
21.4A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
12nC @ 10V
Power - Max
59W
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5521-2
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
Avalanche ruggedness
E
Dynamic characteristics
Q
D
DS
tot
DS(AL)S
DSon
GD
Q101 compliant
Suitable for standard level gate drive
sources
12 V, 24 V and 42 V loads
Automotive systems
DC-to-DC converters
BUK7Y54-75B
N-channel TrenchMOS standard level FET
Rev. 04 — 7 April 2010
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
non-repetitive
drain-source
avalanche energy
gate-drain charge I
Conditions
T
V
see
T
V
T
see
I
R
T
V
D
D
j
mb
j
j(init)
GS
GS
GS
GS
≥ 25 °C; T
= 25 °C; see
= 21.4 A; V
= 10 A; V
Figure
Figure 13
= 25 °C; see
= 10 V; T
= 10 V; I
= 10 V; see
= 50 Ω; V
= 25 °C; unclamped
1; see
DS
j
D
≤ 175 °C
mb
sup
GS
= 10 A;
= 60 V;
Figure
Figure 14
= 25 °C;
≤ 75 V;
= 10 V;
Figure 2
Figure 4
12;
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Solenoid drivers
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
45
-
5.12 -
Max Unit
75
21.4 A
59
54
33
V
W
mΩ
mJ
nC

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BUK7Y54-75B,115 Summary of contents

Page 1

... BUK7Y54-75B N-channel TrenchMOS standard level FET Rev. 04 — 7 April 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications ...

Page 2

... N-channel TrenchMOS standard level FET Simplified outline SOT669 (LFPAK) Description plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK7Y54-75B Graphic symbol mbb076 Version © NXP B.V. 2010. All rights reserved ...

Page 3

... ° see Figure °C; see Figure °C mb ≤ 10 µs; pulsed ° ≤ Ω 21 sup °C; unclamped GS j(init) see Figure 3 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK7Y54-75B Min Typ Max - - - 21 15 -55 - 175 -55 - 175 - - 21.4 ...

Page 4

... T (°C) mb Fig ( All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK7Y54-75B N-channel TrenchMOS standard level FET 120 100 150 Normalized total power dissipation as a function of mounting base temperature 003aac500 (1) (2) ( (ms) AL 03na19 200 T (°C) mb © ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration. BUK7Y54-75B Product data sheet = DSon Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK7Y54-75B N-channel TrenchMOS standard level FET 003aac621 10μ s 100μ s 1ms 10ms 100ms V (V) DS Min Typ - - 003aac483 δ ...

Page 6

... Figure see Figure MHz °C; see Figure Ω Ω R G(ext ° see Figure /dt = -100 A/µ All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK7Y54-75B Min Typ Max 4 0. 500 - 2 100 - 2 100 - - 129 2 5. 602 803 - 109 ...

Page 7

... V (V) DS Fig 7. 003aac931 (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK7Y54-75B N-channel TrenchMOS standard level FET 200 4.5 5 5.5 6 6.5 150 100 Drain-source on-state resistance as a function of drain current; typical values ...

Page 8

... R DSON (mΩ) 100 140 180 T (°C) j Fig 13. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK7Y54-75B N-channel TrenchMOS standard level FET −1 min typ −2 −3 −4 −5 − gate-source voltage ...

Page 9

... Q (nC) G Fig 15. Input, output and reverse transfer capacitances ( 175 ° 0.4 0.8 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK7Y54-75B N-channel TrenchMOS standard level FET function of drain-source voltage; typical values. 003aac934 = 25 °C j 1.2 1.6 V (V) SD ...

Page 10

... D max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK7Y54-75B N-channel TrenchMOS standard level FET detail (1) (1) ( 5.0 3.3 6.2 ...

Page 11

... Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK7Y54-75B Supersedes BUK7Y54-75B_3 BUK7Y54-75B_2 © NXP B.V. 2010. All rights reserved ...

Page 12

... All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK7Y54-75B N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK7Y54-75B N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 7 April 2010 Document identifier: BUK7Y54-75B ...

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