BUK624R5-30C,118 NXP Semiconductors, BUK624R5-30C,118 Datasheet - Page 7

• Manufacturer Part Number: BUK624R5-30C,118
• Description: MOSFET N-CH TRENCH DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK624R5-30C,118

• Input Capacitance (ciss) @ Vds: 4707pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Power - Max: 158W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 90 A
• Power Dissipation: 158 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
Table 6.
BUK624R5-30C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
(A)
g
I
125
100
D
fs
100
75
50
25
75
50
25
0
0
drain current; typical values
function of drain-source voltage; typical values
Forward transconductance as a function of
Output characteristics; drain current as a
0
0
Characteristics
10.0
Parameter
source-drain voltage
reverse recovery time
recovered charge
0.5
25
5.0
4.5
…continued
50
1
V
1.5
75
GS
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
(V) =
V
DS
003aae308
003aae595
= 25 A; V
= 20 A; dI
I
DS
D
Figure 16
(A)
= 25 V
(V)
4.0
3.8
3.6
3.4
3.2
Rev. 2 — 17 September 2010
100
2
GS
S
/dt = -100 A/µs; V
= 0 V; T
Fig 6.
Fig 8.
j
= 25 °C;
(m)
R
(A)
DS on
I
D
100
N-channel TrenchMOS intermediate level FET
40
30
20
10
80
60
40
20
0
0
of gate-source voltage; typical values
function of gate-source voltage; typical values
Drain-source on-state resistance as a function
Transfer characteristics: drain current as a
GS
0
0
= 0 V;
T
j
= 175 C
5
2
BUK624R5-30C
Min
-
-
-
10
T
j
= 25 C
4
Typ
0.8
46
57
15
© NXP B.V. 2010. All rights reserved.
V
V
GS
003a a e 594
003a a e 808
GS
(V)
Max
1.2
-
-
(V)
20
6
Unit
V
ns
nC
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