PSMN011-80YS,115 NXP Semiconductors, PSMN011-80YS,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN011-80YS,115
• Description: MOSFET N-CH 80V LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN011-80YS,115

• Input Capacitance (ciss) @ Vds: 2800pF @ 40V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 67A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Power - Max: 117W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 117 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5577-2

NXP Semiconductors
Table 6.
PSMN011-80YS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
I
(S)
100
g
D
100
fs
80
60
40
20
80
60
40
20
0
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
Characteristics
20
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
10
1
8
40
…continued
6
60
2
V
GS
80
All information provided in this document is subject to legal disclaimers.
(V) = 4.5
003aad311
003aad338
V
DS
I
D
(A)
(V)
5.5
5
Rev. 02 — 28 October 2010
100
Conditions
I
see
I
V
S
S
3
GS
= 25 A; V
= 40 A; dI
Figure 17
= 0 V; V
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
GS
S
DS
/dt = 100 A/µs;
Fig 6.
Fig 8.
= 0 V; T
= 40 V
(pF)
(A)
4000
3500
3000
2500
2000
1500
1000
I
C
D
100
80
60
40
20
0
function of gate-source voltage; typical values
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
Input and reverse transfer capacitances as a
j
0
0
= 25 °C;
5
2
PSMN011-80YS
10
T
j
Min
-
-
-
= 175 °C
15
4
Typ
0.8
54
98
© NXP B.V. 2010. All rights reserved.
20
T
V
j
003aad333
GS
003aad337
= 25 °C
V
C
C
GS
(V)
iss
rss
Max
1.2
-
-
(V)
25
6
Unit
V
ns
nC
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