PSMN014-60LS,115 NXP Semiconductors, PSMN014-60LS,115 Datasheet - Page 6
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
PSMN014-60LS,115
Manufacturer Part Number
PSMN014-60LS,115
Description
MOSFET N-CH 60V QFN3333
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN014-60LS115.pdf
(14 pages)
Specifications of PSMN014-60LS,115
Input Capacitance (ciss) @ Vds
1264pF @ 30V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
14 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
19.6nC @ 10V
Power - Max
65W
Mounting Type
Surface Mount
Package / Case
8-VDFN Exposed Pad
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
14 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
46 A
Power Dissipation
56 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5308-2
NXP Semiconductors
Table 6.
PSMN014-60LS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
I
(S)
g
D
50
40
30
20
10
fs
50
40
30
20
10
0
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
10
10
0.5
7.0
6.0
20
5.5
…continued
1
30
1.5
V
Conditions
I
see
I
V
40
All information provided in this document is subject to legal disclaimers.
S
S
GS
DS
003aae472
003aae474
V
= 15 A; V
= 15 A; dI
DS
I
(V) = 4
D
Figure 16
= 30 V
(A)
(V)
5.0
4.5
50
Rev. 2 — 18 August 2010
2
GS
S
/dt = 100 A/µs; V
= 0 V; T
N-channel QFN3333 60 V 14 mΩ standard level MOSFET
Fig 6.
Fig 8.
j
= 25 °C;
(pF)
(A)
I
2000
1500
1000
C
D
500
40
30
20
10
0
0
GS
function of gate-source voltage; typical values
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
Input and reverse transfer capacitances as a
0
0
= 0 V;
5
2
PSMN014-60LS
T
j
= 175 °C
Min
-
-
-
10
4
Typ
0.85
33
36
15
© NXP B.V. 2010. All rights reserved.
T
V
j
GS
003aae473
003aae475
= 25 °C
V
GS
(V)
Max
1.2
-
-
(V)
C
C
rss
iss
20
6
Unit
V
ns
nC
6 of 14