PSMN014-60LS,115 NXP Semiconductors, PSMN014-60LS,115 Datasheet - Page 6

• Manufacturer Part Number: PSMN014-60LS,115
• Description: MOSFET N-CH 60V QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN014-60LS,115

• Input Capacitance (ciss) @ Vds: 1264pF @ 30V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 19.6nC @ 10V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 14 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 46 A
• Power Dissipation: 56 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5308-2

NXP Semiconductors
Table 6.
PSMN014-60LS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
I
(S)
g
D
50
40
30
20
10
fs
50
40
30
20
10
0
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
10
10
0.5
7.0
6.0
20
5.5
…continued
1
30
1.5
V
Conditions
I
see
I
V
40
All information provided in this document is subject to legal disclaimers.
S
S
GS
DS
003aae472
003aae474
V
= 15 A; V
= 15 A; dI
DS
I
(V) = 4
D
Figure 16
= 30 V
(A)
(V)
5.0
4.5
50
Rev. 2 — 18 August 2010
2
GS
S
/dt = 100 A/µs; V
= 0 V; T
N-channel QFN3333 60 V 14 mΩ standard level MOSFET
Fig 6.
Fig 8.
j
= 25 °C;
(pF)
(A)
I
2000
1500
1000
C
D
500
40
30
20
10
0
0
GS
function of gate-source voltage; typical values
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
Input and reverse transfer capacitances as a
0
0
= 0 V;
5
2
PSMN014-60LS
T
j
= 175 °C
Min
-
-
-
10
4
Typ
0.85
33
36
15
© NXP B.V. 2010. All rights reserved.
T
V
j
GS
003aae473
003aae475
= 25 °C
V
GS
(V)
Max
1.2
-
-
(V)
C
C
rss
iss
20
6
Unit
V
ns
nC
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