BUK6607-55C,118 NXP Semiconductors, BUK6607-55C,118 Datasheet - Page 9

• Manufacturer Part Number: BUK6607-55C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6607-55C,118

• Input Capacitance (ciss) @ Vds: 5160pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 82nC @ 10V
• Power - Max: 158W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 158 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK6607-55C
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
V
−2
GS
V
V
V
GS(pl)
DS
GS(th)
GS
= 0 V; f = 1 MHz
10
Q
−1
GS1
I
Q
D
GS
Q
GS2
1
Q
G(tot)
Q
GD
10
All information provided in this document is subject to legal disclaimers.
V
003aae897
003aaa508
DS
(V)
C
C
C
iss
rss
oss
10
Rev. 1 — 14 October 2010
2
N-channel TrenchMOS logic and standard level FET
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of
V
(A)
(V)
I
GS
S
100
10
80
60
40
20
8
6
4
2
0
0
charge; typical values
source-drain (diode forward) voltage; typical
values
T
V
0
0
j
GS
= 25°C; I
= 0 V
V
DS
0.3
25
= 14 V
D
= 25 A
T
j
= 175 °C
BUK6607-55C
0.6
50
24 V
0.9
75
T
j
© NXP B.V. 2010. All rights reserved.
= 25 °C
Q
003aae899
003aae896
V
G
SD
(nC)
(V)
100
1.2
9 of 14