BUK7Y18-75B,115 NXP Semiconductors, BUK7Y18-75B,115 Datasheet - Page 11
BUK7Y18-75B,115
Manufacturer Part Number
BUK7Y18-75B,115
Description
MOSFET N-CH 75V 49A LFPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7Y18-75B115.pdf
(14 pages)
Specifications of BUK7Y18-75B,115
Input Capacitance (ciss) @ Vds
2173pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
49A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
35nC @ 10V
Power - Max
105W
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5516-2
NXP Semiconductors
8. Revision history
Table 7.
BUK7Y18-75B
Product data sheet
Document ID
BUK7Y18-75B_3
Modifications:
BUK7Y18-75B_2
Revision history
Release date
20100407
20100218
•
Status changed from objective to product.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Objective data sheet
Rev. 03 — 7 April 2010
Change notice
-
-
N-channel TrenchMOS standard level FET
BUK7Y18-75B
BUK7Y18-75B_1
Supersedes
BUK7Y18-75B_2
© NXP B.V. 2010. All rights reserved.
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