BUK6607-75C,118 NXP Semiconductors, BUK6607-75C,118 Datasheet - Page 2

• Manufacturer Part Number: BUK6607-75C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6607-75C,118

• Input Capacitance (ciss) @ Vds: 7600pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 123nC @ 10V
• Power - Max: 204W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 mOhms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 204 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK6607-75C
Product data sheet
Pin
1
2
3
mb
Type number
BUK6607-75C
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
Drain
source
mounting base; connected to
drain
Table 1.
[1]
Package
Name
D2PAK
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
DS(AL)S
GD
Continuous current is limited by package.
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge I
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 17 November 2010
Simplified outline
SOT404 (D2PAK)
Conditions
I
R
T
V
see
D
D
…continued
j(init)
GS
GS
= 100 A; V
= 25 A; V
Figure 14
= 10 V; see
= 50 Ω; V
= 25 °C; unclamped
1
mb
2
3
DS
sup
GS
= 60 V;
≤ 75 V;
Figure
= 10 V;
13;
Graphic symbol
BUK6607-75C
N-channel TrenchMOS FET
mbb076
G
Min
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
-
35
Version
SOT404
Max Unit
191
-
2 of 14
mJ
nC