BUK655R0-75C,127 NXP Semiconductors, BUK655R0-75C,127 Datasheet - Page 4
![MOSFET N-CH TRENCH SOT78A](/photos/16/7/160729/to220ab_sml.jpg)
BUK655R0-75C,127
Manufacturer Part Number
BUK655R0-75C,127
Description
MOSFET N-CH TRENCH SOT78A
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK655R0-75C127.pdf
(14 pages)
Specifications of BUK655R0-75C,127
Input Capacitance (ciss) @ Vds
11400pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.3 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
2.8V @ 1mA
Gate Charge (qg) @ Vgs
177nC @ 10V
Power - Max
263W
Mounting Type
Through Hole
Package / Case
TO-220-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 mOhms
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
263 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
NXP Semiconductors
BUK655R0-75C
Product data sheet
Fig 1.
Fig 3.
(A)
10
I
(A)
10
10
10
D
I
160
120
D
10
-1
80
40
4
3
2
1
0
10
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
(1)
50
100
Limit R
DSon
1
= V
150
DS
All information provided in this document is subject to legal disclaimers.
T
003aac793
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/ I
D
(°C)
Rev. 02 — 14 October 2010
200
10
DC
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
50
10
BUK655R0-75C
2
t
100 μ s
1 ms
10 ms
100 ms
p
=10 μ s
100
N-channel TrenchMOS FET
V
DS
(V)
150
© NXP B.V. 2010. All rights reserved.
T
003aae426
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03aa16
(°C)
10
200
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