BUK652R3-40C,127 NXP Semiconductors, BUK652R3-40C,127 Datasheet - Page 12
![MOSFET N-CH TRENCH SOT78A](/photos/16/7/160729/to220ab_sml.jpg)
BUK652R3-40C,127
Manufacturer Part Number
BUK652R3-40C,127
Description
MOSFET N-CH TRENCH SOT78A
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK652R3-40C127.pdf
(15 pages)
Specifications of BUK652R3-40C,127
Input Capacitance (ciss) @ Vds
15100pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.3 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
2.8V @ 1mA
Gate Charge (qg) @ Vgs
260nC @ 10V
Power - Max
306W
Mounting Type
Through Hole
Package / Case
TO-220-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.3 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
306 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
NXP Semiconductors
8. Revision history
Table 7.
BUK652R3-40C
Product data sheet
Document ID
BUK652R3-40C v.2
Modifications:
BUK652R3-40C v.1
Revision history
20100520
Release date
20100818
•
Status changed from objective to product.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Objective data sheet
Rev. 2 — 18 August 2010
N-channel TrenchMOS intermediate level FET
Change notice
-
-
BUK652R3-40C
Supersedes
BUK652R3-40C v.1
-
© NXP B.V. 2010. All rights reserved.
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