BUK662R7-55C,118 NXP Semiconductors, BUK662R7-55C,118 Datasheet - Page 9

MOSFET N-CH TRENCH D2PACK

BUK662R7-55C,118

Manufacturer Part Number
BUK662R7-55C,118
Description
MOSFET N-CH TRENCH D2PACK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK662R7-55C,118

Input Capacitance (ciss) @ Vds
15300pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.7 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
2.8V @ 1mA
Gate Charge (qg) @ Vgs
258nC @ 10V
Power - Max
306W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 leads + Tab), TO-263AB
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.7 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
306 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
NXP Semiconductors
BUK662R7-55C
Product data sheet
Fig 13. Gate charge waveform definitions
Fig 15. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
10
5
4
3
2
10
as a function of drain-source voltage; typical
values
V
−1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
DS
All information provided in this document is subject to legal disclaimers.
003aae205
003aaa508
C
C
C
oss
iss
rss
(V)
Rev. 01 — 7 September 2010
10
2
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of
V
(V)
(A)
GS
I
S
100
N-channel TrenchMOS intermediate level FET
10
80
60
40
20
8
6
4
2
0
0
charge; typical values
source-drain (diode forward) voltage; typical
values
0
0
T
0.3
j
= 175 °C
100
V
DS
BUK662R7-55C
= 14 V
0.6
200
V
DS
T
j
0.9
= 44 V
= 25 °C
Q
© NXP B.V. 2010. All rights reserved.
G
003aae204
003aae207
V
(nC)
SD
(V)
300
1.2
9 of 14

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