BUK6E4R0-75C,127 NXP Semiconductors, BUK6E4R0-75C,127 Datasheet
BUK6E4R0-75C,127
Specifications of BUK6E4R0-75C,127
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BUK6E4R0-75C,127 Summary of contents
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... BUK6E4R0-75C N-channel TrenchMOS FET Rev. 02 — 30 August 2010 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications ...
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... see GS see Figure 14 Simplified outline SOT226 (I2PAK) Description plastic single-ended package (I2PAK); TO-262 All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 August 2010 BUK6E4R0-75C N-channel TrenchMOS FET Min Typ ≤ sup = Figure 13; Graphic symbol mbb076 © ...
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... Figure °C mb ≤ 10 µs; pulsed ° ≤ 120 sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 August 2010 BUK6E4R0-75C N-channel TrenchMOS FET Min Max - 75 [1] -16 16 [2] -20 20 [3] Figure 1 - 120 [3] Figure 1 - 120 - 670 - ...
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... Product data sheet 003aae374 P der (%) 150 200 T (°C) mb Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 August 2010 BUK6E4R0-75C N-channel TrenchMOS FET 120 100 150 Normalized total power dissipation as a function of mounting base temperature =10 μ 100 μ 100 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK6E4R0-75C Product data sheet Conditions see Figure 4 vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 August 2010 BUK6E4R0-75C N-channel TrenchMOS FET Min Typ Max - - 0. 003aae375 t p δ ...
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... Ω R G(ext) from drain lead 6 mm from package to centre of die ; °C j from source lead to source bond pad ; °C j All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 August 2010 BUK6E4R0-75C N-channel TrenchMOS FET Min Typ Max = 25 ° -55 ° 1.8 2.3 2 ...
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... V (V) DS Fig 6. 003aae383 250 g fs (S) 200 150 100 (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 August 2010 BUK6E4R0-75C N-channel TrenchMOS FET Min Typ = 25 ° 218 175 ° < DSon Transfer characteristics: drain current as a function of gate-source voltage ...
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... Fig 10. Gate-source threshold voltage as a function of 003aae381 3.8 4.0 4.5 5 120 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 August 2010 BUK6E4R0-75C N-channel TrenchMOS FET 4 3 max @1mA 2 typ @1mA min @2.5mA 120 junction temperature ...
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... Fig 14. Gate-source voltage as a function of gate 003aae451 (A) C iss C oss C rss (V) DS Fig 16. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 August 2010 BUK6E4R0-75C N-channel TrenchMOS FET (V) 8 14V 100 150 charge; typical values ...
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... max 0.7 1.6 10.3 11 2.54 0.4 1.2 9.7 REFERENCES JEDEC JEITA TO-262 All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 August 2010 BUK6E4R0-75C N-channel TrenchMOS FET mounting base 15.0 3.30 2.6 13.5 2.79 2.2 EUROPEAN PROJECTION SOT226 ISSUE DATE ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK6E4R0-75C v.2 20100830 • Modifications: Status changed from objective to product. • Various changes to content. BUK6E4R0-75C v.1 20100709 BUK6E4R0-75C Product data sheet Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 August 2010 BUK6E4R0-75C N-channel TrenchMOS FET © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 30 August 2010 BUK6E4R0-75C N-channel TrenchMOS FET Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 30 August 2010 Document identifier: BUK6E4R0-75C ...