STD44N4LF6 STMicroelectronics, STD44N4LF6 Datasheet - Page 3

• Manufacturer Part Number: STD44N4LF6
• Description: MOSFET N-CH 40V 44A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STD44N4LF6

• Input Capacitance (ciss) @ Vds: 1190pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12.5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Power - Max: 50W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11.3 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 44 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 22 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-11098-2

STD44N4LF6
1
Electrical ratings
Table 2.
1. Pulse is rated according SOA
Table 3.
1. When mounted on 1 inch
Table 4.
1. Starting Tj = 25 °C, I
Symbol
Symbol
Symbol
R
R
E
I
P
DM
thj-case
V
V
thj-pcb
T
AS
I
I
I
TOT
T
AV
DS
GS
stg
D
D
j
(1)
(1)
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Not-repetitive avalanche current
Single pulse avalanche energy
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Storage temperature
Operating junction temperature
Absolute maximum ratings
Thermal resistance
Avalanche data
D
= I
AV
2
, 2 oz Cu.
, V
DD
Parameter
Parameter
Parameter
= 24 V
C
Doc ID 17171 Rev 2
= 25 °C
GS
= 0)
C
C
= 25 °C
= 100 °C
(1)
- 55 to 175
Value
Value
Value
± 20
0.33
150
176
40
44
31
50
50
20
3
Electrical ratings
W/°C
°C/W
°C/W
Unit
Unit
Unit
mJ
°C
W
V
V
A
A
A
A
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