STD44N4LF6 STMicroelectronics, STD44N4LF6 Datasheet - Page 5

• Manufacturer Part Number: STD44N4LF6
• Description: MOSFET N-CH 40V 44A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STD44N4LF6

• Input Capacitance (ciss) @ Vds: 1190pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12.5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Power - Max: 50W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11.3 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 44 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 22 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-11098-2

STD44N4LF6
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
d(on)
d(off)
RRM
I
SD
Q
t
SD
t
t
r
rr
f
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching on/off (inductive load)
Source drain diode
Parameter
Parameter
Doc ID 17171 Rev 2
V
R
(see
I
I
di/dt = 100 A/µs,
V
(see
SD
SD
DD
G
DD
= 4.7 Ω, V
= 20 A, V
= 40 A,
Test conditions
Test conditions
= 20 V, I
Figure
= 32 V, T
Figure
15)
17)
D
GS
J
GS
= 20 A,
= 150 °C
= 0
= 10 V
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
150
110
Typ.
256
15
65
27
2
Max.
Max.
176
1.1
44
-
-
Unit
Unit
nC
ns
ns
ns
ns
ns
5/15
A
A
V
A