STF14NM50N STMicroelectronics, STF14NM50N Datasheet - Page 5

• Manufacturer Part Number: STF14NM50N
• Description: MOSFET N-CH 500V 12A TO220FP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STF14NM50N

• Input Capacitance (ciss) @ Vds: 816pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Power - Max: 25W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STB14NM50N, STD14NM50N, STF14NM50N, STP14NM50N
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
SD
d(on)
d(off)
RRM
RRM
I
Q
Q
SD
t
t
t
t
rr
rr
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 16832 Rev 4
I
I
V
(see
I
V
(see
V
R
(see
SD
SD
SD
DD
DD
DD
G
= 12 A, V
= 12 A, di/dt = 100 V/ns,
= 12 A, di/dt = 100 V/ns,
=4.7 Ω, V
= 400 V
= 400 V, T
= 400 V, I
Figure
Figure
Figure
Test conditions
Test conditions
21)
21)
18)
GS
GS
D
J
= 12 A,
= 0
= 150 °C
= 10 V
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
22.2
Typ.
10.2
252
300
2.8
3.3
22
16
42
22
Max. Unit
Max
1.6
12
48
-
Unit
µC
µC
ns
ns
ns
ns
ns
ns
5/22
A
A
V
A
A