STGW50HF60SD STMicroelectronics, STGW50HF60SD Datasheet
STGW50HF60SD
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STGW50HF60SD Summary of contents
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... Application ■ PV inverter ■ UPS Description STGW50HF60SD is a very low drop IGBT based on new advanced planar technology, showing extremely low on-state voltage and limited turn-off losses. The overall performance makes this IGBT ideal in low frequency switches of mixed frequency topologies for PF ≤ 1. ...
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... C = 100 ° ° ° max ( ) --------------------------------------------------------------------------------------------------------- - C C × max ( thj c CE sat – =10 Ω =150 °C, R =15 V CES Parameter Doc ID 16818 Rev 2 STGW50HF60SD Value 600 110 60 60 130 ±20 284 30 120 - 55 to 150 – max C C Value 0.44 1.25 50 Unit ...
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... STGW50HF60SD 2 Electrical characteristics (T =25°C unless otherwise specified) J Table 4. Static Symbol Collector-emitter breakdown voltage V (BR)CES ( Collector-emitter saturation V CE(sat) voltage V Gate threshold voltage GE(th) Collector cut-off current I CES ( Gate-emitter leakage I GES current (V g Forward transconductance V fs Table 5. Dynamic Symbol Input capacitance C ies ...
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... R G (see Figure 15 400 Ω 125 °C J Parameter Test conditions di/dt = 100 A/µs (see Figure 18 125 °C, J di/dt = 100 A/µs (see Figure 18) Doc ID 16818 Rev 2 STGW50HF60SD Min. Typ 1280 = (see Figure 15) 1100 = 30 A 370 220 GE 465 = 30 A 700 250 GE (see Figure 15) 800 Min ...
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... STGW50HF60SD 2.1 Electrical characteristics (curves) Figure 2. Output characteristics I ( =15V GE 120 100 Figure 4. Collector-emitter on voltage vs temperature V CE(sat) (V) 1.5 1.4 V =15V GE 1.3 1.2 1.1 1.0 0.9 0 -50 Figure 6. Breakdown voltage vs temperature Figure 7. V (BR)CES ( 1.10 1.05 1.00 0.95 0.90 - Figure 3. AM0922v1 I ( =11V GE 120 ...
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... Figure 11. Switching losses vs gate resistance AM08883v1 E =400V, R =10Ω G =15V, T =125°C J 1000 (A) C Figure 13. AM08885v1 I C (A) 10 =30A C =10Ω 0.1 0.01 100 T (°C) 0.1 J Doc ID 16818 Rev 2 STGW50HF60SD Capacitance variations C f=1MHz 0.1 1 100 10 (µJ) E off V =400V, I =30A =15V, T =125° 100 Turn-off SOA R =10Ω ...
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... STGW50HF60SD Figure 14. Emitter-collector diode characteristics typical values =125°C J typical values 10 maximum values AM08887v1 =25°C T =125° (V) F Doc ID 16818 Rev 2 Electrical characteristics 7/13 ...
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... Figure 15. Test circuit for inductive load switching Figure 17. Switching waveform Td(off) Td(on) Tr(Ion) Ton 8/13 Figure 16. Gate charge test circuit AM01504v1 Figure 18. Diode recovery time waveform 90% 10 90% 10% Tr(Voff) Tcross 90% 10% Tf Toff AM01506v1 Doc ID 16818 Rev 2 STGW50HF60SD Q di/ RRM RRM V dv/dt AM01505v1 AM01507v1 ...
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... STGW50HF60SD 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 16818 Rev 2 Package mechanical data ® 9/13 ...
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... TO-247 mechanical data Dim ∅P ∅R S 10/13 mm Min. Typ. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Doc ID 16818 Rev 2 STGW50HF60SD Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 14.80 4.30 3.65 5.50 ...
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... STGW50HF60SD Figure 19. TO-247 drawing Doc ID 16818 Rev 2 Package mechanical data 0075325_F 11/13 ...
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... Revision history 5 Revision history Table 10. Document revision history Date 15-Jan-2010 21-Dec-2010 12/13 Revision 1 Initial release. 2 Document status promoted to datasheet. Doc ID 16818 Rev 2 STGW50HF60SD Changes ...
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... STGW50HF60SD Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...