IXXH100N60C3 IXYS, IXXH100N60C3 Datasheet - Page 4

• Manufacturer Part Number: IXXH100N60C3
• Description: IGBT 600V 190A 830W TO247AD
• Manufacturer: IXYS
• Series: XPT™, GenX3™r

Specifications of IXXH100N60C3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 70A
• Current - Collector (ic) (max): 190A
• Power - Max: 830W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (TO-247AD)
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.2 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 190 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 830 W
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 190
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 100
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 2.2
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 75
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 1.4
• Rthjc, Max, Igbt (c/w): 0.18
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
1000
100
100
0.1
80
70
60
50
40
30
20
10
10
10
0
1
0
0
1
V
CE(sat)
f
= 1 MHz
20
T
T
Single Pulse
J
C
= 175ºC
= 25ºC
5
Limit
Fig. 11. Forward-Bias Safe Operating Area
External Lead Limit
40
10
60
Fig. 7. Transconductance
10
Fig. 9. Capacitance
80
15
V
DS
I
V
C
100
CE
- Amperes
- Volts
- Volts
20
120
25
140
100
T
C oes
C res
J
C ies
= - 40ºC
160
30
25ºC
150ºC
180
35
DC
200
25µs
100µs
1ms
10ms
1000
220
40
0.001
0.01
220
200
180
160
140
120
100
0.1
16
14
12
10
80
60
40
20
0.00001
8
6
4
2
0
0
1
100
0
Fig. 12. Maximum Transient Thermal Impedance
V
I
I
T
R
dv / dt < 10V / ns
150
C
G
J
CE
G
= 70A
= 10mA
= 150ºC
= 2
= 300V
20
Fig. 10. Reverse-Bias Safe Operating Area
Ω
200
0.0001
40
250
Fig. 8. Gate Charge
300
Pulse Width - Second
Q
0.001
G
60
- NanoCoulombs
V
IXXH100N60C3
350
CE
- Volts
80
400
0.01
450
100
500
120
0.1
550
600
140
650
1