IXXK100N60B3H1 IXYS, IXXK100N60B3H1 Datasheet - Page 3

IGBT 600V 190A 695W TO264

IXXK100N60B3H1

Manufacturer Part Number
IXXK100N60B3H1
Description
IGBT 600V 190A 695W TO264
Manufacturer
IXYS
Series
XPT™, GenX3™r
Datasheet

Specifications of IXXK100N60B3H1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 70A
Current - Collector (ic) (max)
190A
Power - Max
695W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-264AA Variation
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
190 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
695 W
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Vces, (v)
600
Ic25, Tc = 25°c, Igbt, (a)
200
Ic90, Tc = 90°c, Igbt, (a)
100
Ic110, Tc = 110°c, Igbt, (a)
-
Vce(sat), Typ, Tj = 25°c, Igbt (v)
1.80
Tfi, Typ, Tj = 25°c, Igbt, (ns)
150
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
2.8
Rthjc, Max, Igbt (c/w)
0.18
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
65
Rthjc, Max, Diode (k/w)
0.30
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXXK100N60B3H1
Manufacturer:
IXYS
Quantity:
918
© 2010 IXYS CORPORATION, All Rights Reserved
140
120
100
140
120
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
80
60
40
20
80
60
40
20
0
0
0
8
0
Fig. 3. Output Characteristics @ T
0.5
0.4
Fig. 1. Output Characteristics @ T
9
35A
Fig. 5. Collector-to-Emitter Voltage vs.
0.8
10
1
Gate-to-Emitter Voltage
70A
V
1.5
1.2
V
CE
11
CE
V
I
GE
- Volts
C
- Volts
= 140A
- Volts
V
V
GE
GE
1.6
= 15V
12
2
= 15V
13V
12V
13V
12V
2.5
13
2
J
J
= 150ºC
= 25ºC
T
J
2.4
14
3
= 25ºC
11V
10V
9V
8V
7V
5V
10V
11V
9V
8V
7V
6V
3.5
2.8
15
350
300
250
200
150
100
180
160
140
120
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
80
60
40
20
0
0
-50
0
4
V
Fig. 2. Extended Output Characteristics @ T
V
GE
GE
-25
= 15V
2
= 15V
5
4
0
14V
Fig. 4. Dependence of V
6
13V
Fig. 6. Input Admittance
6
Junction Temperature
25
T
IXXK100N60B3H1
J
- Degrees Centigrade
8
V
CE
7
50
V
GE
- Volts
10
- Volts
I
C
I
= 140A
I
75
C
C
= 70A
8
= 35A
12
12V
T
J
= 150ºC
CE(sat)
100
- 40ºC
25ºC
14
9
on
125
16
J
= 25ºC
10
150
11V
18
10V
9V
8V
7V
175
11
20

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