BLF7G24L-140,118 NXP Semiconductors, BLF7G24L-140,118 Datasheet - Page 4

• Manufacturer Part Number: BLF7G24L-140,118
• Description: TRANS LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF7G24L-140,118

• Voltage - Rated: 65V
• Transistor Type: LDMOS
• Frequency: 2.3GHz ~ 2.4GHz
• Gain: 17dB
• Current - Test: 1.3A
• Voltage - Test: 28V
• Power - Output: 20W
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

NXP Semiconductors
BLF7G24L-140_7G24LS-140
Preliminary data sheet
Fig 1.
Fig 3.
APCR
(dBc)
(dB)
G
(1) f = 2300 MHz
(2) f = 2400 MHz
(1) f = 2300 MHz
(2) f = 2400 MHz
18.5
17.5
−30
−40
−50
−60
−70
p
855
19
18
17
0
V
Single carrier IS-95 power gain as a function of
load power; typical values
0
V
function of load power; typical values
Single carrier IS-95 ACPR at 885 kHz as a
DS
DS
= 28 V; I
= 28 V; I
20
20
7.2 Single carrier IS-95
Dq
Dq
= 1300 mA.
= 1300 mA.
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz
40
40
(2)
(2)
(1)
60
60
(1)
80
80
All information provided in this document is subject to legal disclaimers.
001aan523
001aan525
P
P
L
L
(W)
(W)
BLF7G24L-140; BLF7G24LS-140
100
100
Rev. 2 — 5 April 2011
Fig 2.
Fig 4.
APCR
(dBc)
(%)
η
(1) f = 2300 MHz
(2) f = 2400 MHz
(1) f = 2300 MHz
(2) f = 2400 MHz
D
−40
−50
−60
−70
−80
1980
50
40
30
20
10
0
0
0
V
Single carrier IS-95 drain efficiency as a
function of load power; typical values
V
Single carrier IS-95 ACPR at 1980 kHz as a
function of load power; typical values
DS
DS
= 28 V; I
= 28 V; I
20
20
Dq
Dq
= 1300 mA.
= 1300 mA.
40
40
(2)
(1)
Power LDMOS transistor
60
60
(1)
(2)
© NXP B.V. 2011. All rights reserved.
80
80
001aan524
001aan526
P
P
L
L
(W)
(W)
100
100
4 of 14