BLF888AS,112 NXP Semiconductors, BLF888AS,112 Datasheet - Page 5

• Manufacturer Part Number: BLF888AS,112
• Description: TRANS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLF888AS,112

• Voltage - Rated: 110V
• Transistor Type: LDMOS (Dual)
• Frequency: 860MHz
• Gain: 21dB
• Current Rating: 36A
• Current - Test: 1.3A
• Voltage - Test: 50V
• Power - Output: 250W
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
7. Application information
BLF888A_BLF888AS
Preliminary data sheet
Fig 2.
(dB)
G
p
24
20
16
12
0
V
narrowband 860 MHz test circuit.
function of load power; typical values
2-Tone power gain and drain efficiency as
DS
= 50 V; I
7.1.1 2-Tone
100
7.1 Narrowband RF figures
G
η
D
p
Dq
= 1.3 A; measured in a common source
200
300
400
All information provided in this document is subject to legal disclaimers.
P
001aan761
L(AV)
(W)
500
Rev. 2 — 1 March 2011
60
40
20
0
(%)
η
D
Fig 3.
(dB)
G
p
24
20
16
12
0
V
narrowband 860 MHz test circuit.
2-Tone power gain and third order
intermodulation distortion as load power;
typical values
DS
BLF888A; BLF888AS
= 50 V; I
100
IMD3
G
p
Dq
= 1.3 A; measured in a common source
200
UHF power LDMOS transistor
300
400
© NXP B.V. 2011. All rights reserved.
P
001aan762
L(AV)
(W)
500
0
-20
-40
-60
IMD3
(dBc)
5 of 17