BFS17W,135 NXP Semiconductors, BFS17W,135 Datasheet - Page 4
![TRANS NPN 15V 50MA 1GHZ SOT323](/photos/16/4/160422/sot323_sml.jpg)
BFS17W,135
Manufacturer Part Number
BFS17W,135
Description
TRANS NPN 15V 50MA 1GHZ SOT323
Manufacturer
NXP Semiconductors
Datasheet
1.BFS17W115.pdf
(8 pages)
Specifications of BFS17W,135
Package / Case
SC-70, SOT-323
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
1.6GHz
Noise Figure (db Typ @ F)
4.5dB @ 500MHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 2mA, 1V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
25
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
50 mA
Power Dissipation
300 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
1995 Sep 04
handbook, halfpage
handbook, halfpage
NPN 1 GHz wideband transistor
I
V
B
CE
(pF)
= i
C re
(dB)
Fig.4
F
= 10 V.
Fig.6
b
1.5
0.5
20
15
10
= 0; f = 1 MHz.
2
1
0
5
0
10
0
−3
Feedback capacitance as a function of
collector-base voltage; typical values.
Minimum noise figure as function of
frequency; typical values.
10
−2
2
10
−1
4
1
6
10
8
10
V CB (V)
f (MHz)
2
MBG240
MBG238
10
10
3
4
handbook, halfpage
T
(GHz)
amb
f T
2.5
= 25 C; f = 500 MHz.
1.5
Fig.5
2
1
1
Transition frequency as a function
of collector current; typical values.
10
Product specification
I C (mA)
V CE = 10 V
5 V
BFS17W
MBG239
10
2