BFR93A,235 NXP Semiconductors, BFR93A,235 Datasheet - Page 7

• Manufacturer Part Number: BFR93A,235
• Description: TRANS NPN 12V 35MA 6GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR93A,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 6GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 5V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 35 mA
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
1997 Oct 29
handbook, halfpage
handbook, halfpage
NPN 6 GHz wideband transistor
d im
(dB)
V
V
f
Measured in MATV test circuit (see Fig.2)
Fig.15 Intermodulation distortion; typical values.
p
CE
CE
+ f
(dB)
Fig.13 Minimum noise figure as a function of
F
= 8 V.
= 8 V; V
q
40
45
50
55
60
65
f
4
3
2
0
1
r
0
1
= 793.25 MHz; T
O
collector current; typical values.
= 425 mV (52.6 dBmV);
10
amb
= 25 C.
20
10
I
C
30
(mA)
f = 2 GHz
1 GHz
500 MHz
I
C
MBB263
(mA)
MCD094
10
40
2
7
handbook, halfpage
handbook, halfpage
(dB)
d 2
V
V
f
Measured in MATV test circuit (see Fig.2)
p
CE
CE
+ f
(dB)
Fig.16 Second order intermodulation distortion;
Fig.14 Minimum noise figure as a function of
F
= 8 V.
= 8 V; V
q
30
35
40
45
50
55
f
4
3
2
0
1
10
r
0
= 810 MHz; T
10 mA
I
2
5 mA
C
typical values.
O
= 30 mA
frequency; typical values.
= 200 mV (46 dBmV);
10
amb
= 25 C.
10
20
3
Product specification
f (MHz)
30
I
C
BFR93A
MBB264
(mA)
MCD095
10
40
4