PBR941B,215 NXP Semiconductors, PBR941B,215 Datasheet - Page 2

• Manufacturer Part Number: PBR941B,215
• Description: TRANSISTOR NPN UHF 50MA SOT23-3
• Manufacturer: NXP Semiconductors

Specifications of PBR941B,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.5dB @ 1GHz
• Power - Max: 360mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 6V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Dc Current Gain Hfe Max: 200
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 50 mA
• Power Dissipation: 360 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-6386-2; PBR941B,215

Philips Semiconductors
FEATURES
• Small size
• Low noise
• Low distortion
• High gain
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Communication and instrumentation systems.
DESCRIPTION
Silicon NPN transistor in a surface mount 3-pin SOT23
package. The transistor is primarily intended for wideband
applications in the GHz range in the RF front end of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.
QUICK REFERENCE DATA
Note
1. T
2001 Jan 18
C
f
G
NF
P
R
SYMBOL
T
tot
re
th j-s
UHF wideband transistor
UM
s
is the temperature at the soldering point of the collector pin.
feedback capacitance
transition frequency
maximum unilateral power gain
noise figure
total power dissipation
thermal resistance from junction
to soldering point
PARAMETER
I
I
I
T
Γ
f = 1 GHz
T
C
C
C
amb
S
s
= 0; V
= 15 mA; V
= 15 mA; V
= 60 °C; note 1
= Γ
= 25 °C; f = 1 GHz
opt
CB
; I
2
CONDITIONS
C
= 6 V; f = 1 MHz
= 5 mA; V
PINNING SOT23
handbook, halfpage
CE
CE
Marking code: LBp
= 6 V; f
= 6 V;
PIN
1
2
3
CE
m
Fig.1 Simplified outline (SOT23).
base
emitter
collector
= 6 V;
= 1 GHz
Top view
1
−
7
−
−
−
−
MIN.
DESCRIPTION
3
Preliminary specification
MSB003
0.3
9
16
1.5
−
−
TYP.
2
PBR941B
−
−
−
2.5
360
320
MAX.
pF
GHz
dB
dB
mW
K/W
UNIT