BFR92A,235 NXP Semiconductors, BFR92A,235 Datasheet - Page 7
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BFR92A,235
Manufacturer Part Number
BFR92A,235
Description
TRANS NPN 15V 25MA 5GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BFR92A215.pdf
(12 pages)
Specifications of BFR92A,235
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
5GHz
Noise Figure (db Typ @ F)
2.1dB ~ 3dB @ 1GHz ~ 2GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
65 @ 15mA, 10V
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
65
Dc Current Gain Hfe Max
135
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
25 mA
Power Dissipation
300 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 5 GHz wideband transistor
d im
(dB)
V
V
f
Measured in MATV test circuit (see Fig.2).
Fig.13 Minimum noise figure as a function of
(dB)
p
CE
CE
+ f
F
45
50
55
60
65
70
= 10 V.
= 10 V; V
q
4
3
2
0
10
1
1
f
Fig.15 Intermodulation distortion;
r
= 793.25 MHz; T
collector current; typical values.
O
= 150 mV (43.5 dBmV);
typical values.
amb
= 25 C.
20
10
f = 2 GHz
1 GHz
500 MHz
I
I
C
C
(mA)
(mA)
MBB282
MCD081
30
10
Rev. 04 - 2 March 2009
2
handbook, halfpage
handbook, halfpage
(dB)
V
d 2
V
Measured in MATV test circuit (see Fig.2).
Fig.14 Minimum noise figure as a function of
Fig.16 Second order intermodulation distortion;
(dB)
CE
CE
F
35
40
45
50
55
60
= 10 V.
= 10 V; V
4
3
2
0
1
10
10
2
frequency; typical values.
typical values.
O
= 60 mV; f
p
+ f
q
20
10
f
r
3
= 810 MHz; T
10 mA
I
5 mA
I
Product specification
C
C
f (MHz)
(mA)
= 15 mA
amb
BFR92A
MBB283
MCD082
= 25 C.
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30
10
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