BFR94A,215 NXP Semiconductors, BFR94A,215 Datasheet - Page 4

• Manufacturer Part Number: BFR94A,215
• Description: TRANS NPN 5GHZ TO-236AB
• Manufacturer: NXP Semiconductors

Specifications of BFR94A,215

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2.1dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 65 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 65
• Gain Bandwidth Product Ft: 5 GHz
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Details

NXP Semiconductors
BFR94A
Product data sheet
Fig 1.
Fig 2.
(mW)
P
tot
400
300
200
100
0
L1 = L2 = 5 μH choke.
L2 = 3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm.
Intermodulation distortion and second harmonic distortion MATV test circuit
0
Power derating curve
50
100
+V
75 Ω
input
BB
150
All information provided in this document is subject to legal disclaimers.
T
001aam884
2.2 nF
sp
1 nF
(°C)
Rev. 3 — 15 November 2010
200
33 kΩ
L1
300 Ω
L2
3.3 pF
Fig 3.
1 nF
h
DUT
FE
120
18 Ω
80
40
L3
0
0
V
DC current gain as a function of collector
current; typical values
2.2 nF
CE
= 10 V; T
1 nF
0.82 pF
001aam883
+V
75 Ω
output
j
CC
10
= 25 °C.
NPN 5 GHz wideband transistor
20
I
© NXP B.V. 2010. All rights reserved.
C
BFR94A
001aam885
(mA)
30
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