BFR94A,215 NXP Semiconductors, BFR94A,215 Datasheet - Page 4
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BFR94A,215
Manufacturer Part Number
BFR94A,215
Description
TRANS NPN 5GHZ TO-236AB
Manufacturer
NXP Semiconductors
Datasheet
1.BFR94A215.pdf
(14 pages)
Specifications of BFR94A,215
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
5GHz
Noise Figure (db Typ @ F)
2.1dB ~ 3dB @ 1GHz ~ 2GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
65 @ 15mA, 10V
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Package / Case
TO-220-3
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
25 mA
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
65
Gain Bandwidth Product Ft
5 GHz
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Details
NXP Semiconductors
BFR94A
Product data sheet
Fig 1.
Fig 2.
(mW)
P
tot
400
300
200
100
0
L1 = L2 = 5 μH choke.
L2 = 3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm.
Intermodulation distortion and second harmonic distortion MATV test circuit
0
Power derating curve
50
100
+V
75 Ω
input
BB
150
All information provided in this document is subject to legal disclaimers.
T
001aam884
2.2 nF
sp
1 nF
(°C)
Rev. 3 — 15 November 2010
200
33 kΩ
L1
300 Ω
L2
3.3 pF
Fig 3.
1 nF
h
DUT
FE
120
18 Ω
80
40
L3
0
0
V
DC current gain as a function of collector
current; typical values
2.2 nF
CE
= 10 V; T
1 nF
0.82 pF
001aam883
+V
75 Ω
output
j
CC
10
= 25 °C.
NPN 5 GHz wideband transistor
20
I
© NXP B.V. 2010. All rights reserved.
C
BFR94A
001aam885
(mA)
30
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