BFR94AW,115 NXP Semiconductors, BFR94AW,115 Datasheet - Page 4
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BFR94AW,115
Manufacturer Part Number
BFR94AW,115
Description
TRANS NPN 5GHZ SC-70
Manufacturer
NXP Semiconductors
Datasheet
1.BFR94AW115.pdf
(15 pages)
Specifications of BFR94AW,115
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
5GHz
Noise Figure (db Typ @ F)
2dB ~ 3dB @ 1GHz ~ 2GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
65 @ 15mA, 10V
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
25 mA
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
65
Gain Bandwidth Product Ft
5 GHz
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFR94AW,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
BFR94AW
Product data sheet
Fig 1.
Fig 3.
(mW)
(pF)
P
C
tot
re
400
300
200
100
1.0
0.8
0.6
0.4
0.2
0
0
0
Power derating curve
0
I
collector-base voltage; typical values
Feedback capacitance as a function of
C
= 0 mA; f = 1 MHz.
4
50
8
100
12
150
16
All information provided in this document is subject to legal disclaimers.
T
001aam902
001aam904
sp
V
CB
(°C)
(V)
200
Rev. 1 — 29 October 2010
20
Fig 2.
Fig 4.
(GHz)
h
f
FE
T
120
80
40
0
6
4
2
0
0
1
V
DC current gain as a function of collector
current; typical values
V
Transition frequency as a function of collector
current; typical values
CE
CE
= 10 V.
= 5 V; f = 500 MHz; T
10
NPN 5 GHz wideband transistor
10
amb
20
= 25 °C.
BFR94AW
I
C
(mA)
I
© NXP B.V. 2010. All rights reserved.
C
001aam903
001aam905
(mA)
10
30
2
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