BFR94AW,115 NXP Semiconductors, BFR94AW,115 Datasheet - Page 4

• Manufacturer Part Number: BFR94AW,115
• Description: TRANS NPN 5GHZ SC-70
• Manufacturer: NXP Semiconductors

Specifications of BFR94AW,115

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 65 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 65
• Gain Bandwidth Product Ft: 5 GHz
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Details

NXP Semiconductors
BFR94AW
Product data sheet
Fig 1.
Fig 3.
(mW)
(pF)
P
C
tot
re
400
300
200
100
1.0
0.8
0.6
0.4
0.2
0
0
0
Power derating curve
0
I
collector-base voltage; typical values
Feedback capacitance as a function of
C
= 0 mA; f = 1 MHz.
4
50
8
100
12
150
16
All information provided in this document is subject to legal disclaimers.
T
001aam902
001aam904
sp
V
CB
(°C)
(V)
200
Rev. 1 — 29 October 2010
20
Fig 2.
Fig 4.
(GHz)
h
f
FE
T
120
80
40
0
6
4
2
0
0
1
V
DC current gain as a function of collector
current; typical values
V
Transition frequency as a function of collector
current; typical values
CE
CE
= 10 V.
= 5 V; f = 500 MHz; T
10
NPN 5 GHz wideband transistor
10
amb
20
= 25 °C.
BFR94AW
I
C
(mA)
I
© NXP B.V. 2010. All rights reserved.
C
001aam903
001aam905
(mA)
10
30
2
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