BFU710F,115 NXP Semiconductors, BFU710F,115 Datasheet - Page 43
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BFU710F,115
Manufacturer Part Number
BFU710F,115
Description
TRANSISTOR NPN SOT343F
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G10L-40BRN118.pdf
(110 pages)
Specifications of BFU710F,115
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
2.8V
Frequency - Transition
43GHz
Noise Figure (db Typ @ F)
0.85dB ~ 1.45dB @ 5.8GHz ~ 12GHz
Power - Max
136mW
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 1mA, 2V
Current - Collector (ic) (max)
10mA
Mounting Type
Surface Mount
Package / Case
SOT-343F
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BFU710F,115
Manufacturer:
PANASONIC
Quantity:
10 001
leading portfolio for satellite LNB. They join the other
discrete products, including oscillators, amplifiers, switches,
and biasing, to provide complete coverage for all LNB
architectures.
Since the transistor and the MMICs are manufactured in NXP’s
industry-leading QUBiC4X SiGe:C and QuBiC4+ process,
Satellite outdoor unit, LNB for multiple users
NOTE: Also look at chapter 1.4.4 satellite outdoor unit.
Quick reference satellite IF gain MMICs
No output inductor necessary when using the new BGA28xx IF Gain blocks at the output stage.
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
Type
Package
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
horizontal
antenna
antenna
vertical
(V)
3.3
3.3
3.3
3.3
5.0
5.0
5.0
V
stage
stage
LNA
LNA
s
1
1
st
st
BIAS IC
@
stage
stage
LNA
LNA
(mA)
2
2
12.4
16.4
19.6
22.7
15.4
9.7
7.7
nd
nd
I
s
stage
stage
LNA
LNA
3
3
rd
rd
@-3dB
(GHz)
3.0
2.3
2.6
>3
>3
>3
>3
F
u
mixer
high
low
(dB)
mixer
mixer
NF
mixer
3.4
3.6
3.4
2.8
3.9
3.7
3.6
oscillator
oscillator
@ 1 GHz
Gain
they offer better overall RF performance and are more robust
than their GaAs equivalents for the lowest cost. The process
technology also enables higher integration, for added features.
NXP owns the industrial base for production (wafer fab, test,
assembly), so volume supplies can be assured.
(dB)
20.2
25.4
23.3
23.4
22.1
31.2
31.9
IF amplifier
IF amplifier
IF amplifier
IF amplifier
H high
V high
H low
V low
(dBm)
OIP3
18.2
11.5
13.6
16.1
20.9
17.7
8.7
SWITCH
(4 x 2)
IF
(MHz)
NXP Semiconductors RF Manual 14
250
20.0
22.3
26.2
32.0
23.0
22.9
31.2
(MHz)
amplifier
amplifier
950
20.2
25.4
31.2
23.2
23.3
22.1
31.8
Gain (dB) @
IF
IF
IF out 1
IF out 2
brb022
(MHz)
1550
20.6
23.0
25.5
30.6
23.9
32.6
24.0
th
edition
(MHz)
2150
20.6
23.8
25.8
28.7
24.0
31.4
24.3
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