NX3L1G3157GW,125 NXP Semiconductors, NX3L1G3157GW,125 Datasheet - Page 16

IC ANALOG SWITCH SPDT SOT363

NX3L1G3157GW,125

Manufacturer Part Number
NX3L1G3157GW,125
Description
IC ANALOG SWITCH SPDT SOT363
Manufacturer
NXP Semiconductors
Datasheet

Specifications of NX3L1G3157GW,125

Number Of Switches
1
Switch Configuration
SPDT
On Resistance (max)
4.1 Ohms
On Time (max)
52 ns
Off Time (max)
30 ns
Off Isolation (typ)
- 90 dB
Supply Voltage (max)
4.3 V
Supply Voltage (min)
1.4 V
Supply Current
690 nA, 800 nA
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
SC-88
Minimum Operating Temperature
- 40 C
Off State Leakage Current (max)
+/- 500 nA
Operating Frequency
60 MHz
Power Dissipation
250 mW
Switch Current (typ)
+/- 350 mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5539-2
NXP Semiconductors
NX3L1G3157_8
Product data sheet
Fig 22. Test circuit for measuring charge injection
a. Test circuit
b. Input and output pulse definitions
Definition: Q
ΔV
R
V
gen
gen
O
= output voltage variation.
= generator voltage.
= generator resistance.
inj
= ΔV
O
× C
L
.
V I
input
G
logic
V
O
All information provided in this document is subject to legal disclaimers.
(S)
V
O
off
Rev. 08 — 26 April 2010
R L
C L
S
Z
on
Low-ohmic single-pole double-throw analog switch
V
CC
GND
Y0
Y1
1
2
001aac478
switch
off
ΔV
001aac366
O
R gen
V gen
NX3L1G3157
© NXP B.V. 2010. All rights reserved.
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