MT47H32M16HR-3:F Micron Technology Inc, MT47H32M16HR-3:F Datasheet - Page 43
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MT47H32M16HR-3:F
Manufacturer Part Number
MT47H32M16HR-3:F
Description
IC DDR2 SDRAM 512MBIT 3NS 84FBGA
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H32M16HR-3F.pdf
(132 pages)
Specifications of MT47H32M16HR-3:F
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
512M (32Mx16)
Speed
3ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
84-TFBGA
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
450ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
250mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1466
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H32M16HR-3:F
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT47H32M16HR-3:F
Manufacturer:
MICRON/美光
Quantity:
20 000
Company:
Part Number:
MT47H32M16HR-3:F(D9JLR)
Manufacturer:
TOSH
Quantity:
1 225
Company:
Part Number:
MT47H32M16HR-3:F(D9JLR)
Manufacturer:
MICRON
Quantity:
1 000
Part Number:
MT47H32M16HR-3:FTR
Manufacturer:
MICRON/镁光
Quantity:
20 000
ODT DC Electrical Characteristics
Table 14: ODT DC Electrical Characteristics
All voltages are referenced to V
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. R 12/10 EN
Parameter
R
EMR (A6, A2) = 0, 1
R
EMR (A6, A2) = 1, 0
R
EMR (A6, A2) = 1, 1
Deviation of VM with respect to V
TT
TT
TT
effective impedance value for 75Ω setting
effective impedance value for 150Ω setting
effective impedance value for 50Ω setting
Notes:
1. R
2. Minimum IT and AT device values are derated by six percent when the devices operate
3. Measure voltage (VM) at tested ball with no load.
SS
being tested, and then measuring current, I(V
between –40°C and 0°C (T
DDQ
TT1(EFF)
/2
and R
TT2(EFF)
are determined by separately applying V
43
C
).
Symbol
R
R
R
TT1(EFF)
TT2(EFF)
TT3(EFF)
ΔVM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
ODT DC Electrical Characteristics
IH[AC]
Min
120
60
40
–6
), and I(V
Nom
150
75
50
–
IL[AC]
© 2004 Micron Technology, Inc. All rights reserved.
IH(AC)
Max
180
90
60
), respectively.
6
and V
Units
%
IL(DC)
Ω
Ω
Ω
to the ball
Notes
1, 2
1, 2
1, 2
3