W25Q64CVSSIG Winbond Electronics, W25Q64CVSSIG Datasheet - Page 26

no-image

W25Q64CVSSIG

Manufacturer Part Number
W25Q64CVSSIG
Description
IC SPI FLASH 64MBIT 8-SOIC
Manufacturer
Winbond Electronics
Datasheet

Specifications of W25Q64CVSSIG

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
64M (8M x 8)
Speed
80MHz
Interface
SPI Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (0.083", 2.10mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q5822008

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
W25Q64CVSSIG
Manufacturer:
WINBOND/华邦
Quantity:
20 000
Company:
Part Number:
W25Q64CVSSIG
Quantity:
15
W25Q64CV
11.2.10 Read Data (03h)
The Read Data instruction allows one or more data bytes to be sequentially read from the memory. The
instruction is initiated by driving the /CS pin low and then shifting the instruction code “03h” followed by
a 24-bit address (A23-A0) into the DI pin. The code and address bits are latched on the rising edge of the
CLK pin. After the address is received, the data byte of the addressed memory location will be shifted out
on the DO pin at the falling edge of CLK with most significant bit (MSB) first. The address is automatically
incremented to the next higher address after each byte of data is shifted out allowing for a continuous
stream of data. This means that the entire memory can be accessed with a single instruction as long as
the clock continues. The instruction is completed by driving /CS high.
The Read Data instruction sequence is shown in figure 9. If a Read Data instruction is issued while an
Erase, Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any
effects on the current cycle. The Read Data instruction allows clock rates from D.C. to a maximum of f
R
(see AC Electrical Characteristics).
Figure 9. Read Data Instruction Sequence Diagram
- 26 -

Related parts for W25Q64CVSSIG