CY7C1520KV18-200BZC Cypress Semiconductor Corp, CY7C1520KV18-200BZC Datasheet - Page 16

• Manufacturer Part Number: CY7C1520KV18-200BZC
• Description: IC SRAM 72MBIT 200MHZ 165-FPBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1520KV18-200BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 72M (2M x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

TAP Controller Block Diagram
TAP Electrical Characteristics
Over the Operating Range
Notes
Document Number: 001-00437 Rev. *J
V
V
V
V
V
V
I
10. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the
11. Overshoot: V
12. All voltage referenced to Ground.
X
OH1
OH2
OL1
OL2
IH
IL
Parameter
TDI
TCK
TMS
IH
(AC) < V
Output HIGH voltage
Output HIGH voltage
Output LOW voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input and output load current
DDQ
Selection
Circuitry
+ 0.85 V5 V (Pulse width less than t
[10, 11, 12]
Description
108
31
Boundary Scan Register
30
Identification Register
.
Instruction Register
CYC
29
/2), Undershoot: V
.
TAP Controller
.
.
.
.
GND ≤ V
IL
I
I
I
I
OH
OH
OL
OL
Bypass Register
2
2
2
(AC) >
= 2.0 mA
= 100 μA
= −2.0 mA
= −100 μA
Test Conditions
CY7C1516KV18, CY7C1527KV18
CY7C1518KV18, CY7C1520KV18
1
1
1
−
1.5 V (Pulse width less than t
I
≤ V
0
0
0
0
DD
Electrical Characteristics
Selection
Circuitry
0.65 V
–0.3
Min
CYC
1.4
1.6
–5
–
–
/2).
DD
V
0.35 V
DD
Max
Table.
0.4
0.2
–
–
5
+ 0.3
DD
Page 16 of 33
TDO
Unit
μA
V
V
V
V
V
V
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