BLM6G22-30G,118 NXP Semiconductors, BLM6G22-30G,118 Datasheet - Page 5

• Manufacturer Part Number: BLM6G22-30G,118
• Description: TRANS SOT834-1
• Manufacturer: NXP Semiconductors

Specifications of BLM6G22-30G,118

• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 30dB
• Package / Case: SOT822-1
• Rf Type: W-CDMA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLM6G22-30_BLM6G22-30G
Product data sheet
Fig 3.
Fig 5.
(dB)
(dB)
G
G
(1) T
(2) T
(3) T
p
p
35
33
31
29
27
25
38
36
34
32
30
28
26
24
2050
10
T
I
efficiency as functions of frequency;
typical values
V
carrier spacing = 10 MHz.
efficiency as functions of
average output power and temperature;
typical values
2-carrier W-CDMA power gain and drain
2-carrier W-CDMA power gain and drain
Dq2
−1
case
case
case
case
DS
(1)
(2)
= 280 mA; carrier spacing = 10 MHz.
(3)
= 28 V; I
= 25 °C; V
= −30 °C
= 25 °C
= 85 °C
8.3 Performance curves
2100
Dq1
1
DS
(1), (2), (3)
Performance curves are measured in a BLM6G22-30G application circuit.
G
G
G
= 270 mA; I
p
p
p
= 28 V; P
G
η
D
p
2150
η
D
L(AV)
Dq2
10
= 280 mA;
2200
= 2 W; I
P
L(AV)
All information provided in this document is subject to legal disclaimers.
f (MHz)
001aah622
001aah624
(W)
Dq1
2250
10
= 270 mA;
Rev. 4 — 7 March 2011
2
15
13
11
9
7
5
35
30
25
20
15
10
5
0
(%)
(%)
η
η
D
D
BLM6G22-30; BLM6G22-30G
Fig 4.
Fig 6.
ACPR
IMD3,
(dBc)
ACPR
IMD3,
(dBc)
(1) T
(2) T
(3) T
−45
−47
−49
−51
−20
−25
−30
−35
−40
−45
−50
−55
W-CDMA 2100 MHz to 2200 MHz power MMIC
2050
10
T
I
2-carrier W-CDMA adjacent power channel
ratio and third order intermodulation distortion
as functions of frequency; typical values
V
carrier spacing = 10 MHz.
2-carrier W-CDMA adjacent power channel
ratio and third order intermodulation distortion
as functions of average output power and
temperature; typical values
Dq2
−1
case
(2)
(2)
case
case
case
DS
= 280 mA; carrier spacing = 10 MHz.
= 28 V; I
= 25 °C; V
= −30 °C
= 25 °C
= 85 °C
(1)
(3)
2100
Dq1
1
DS
= 270 mA; I
(3)
(1)
ACPR
IMD3
= 28 V; P
2150
L(AV)
Dq2
10
= 280 mA;
2200
= 2 W; I
P
IMD3
ACPR
L(AV)
© NXP B.V. 2011. All rights reserved.
f (MHz)
001aah623
001aah625
(W)
Dq1
2250
10
= 270 mA;
2
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