DS90LV019TM National Semiconductor, DS90LV019TM Datasheet - Page 3

• Manufacturer Part Number: DS90LV019TM
• Description: LVDS PHY TRANSCEIVER 155MBS, SOIC8
• Manufacturer: National Semiconductor

Specifications of DS90LV019TM

• Supply Voltage Range: 3V To 3.6V, 4.5V To 5.5V
• Digital Ic Case Style: SOIC
• No. Of Pins: 14
• Operating Temperature Range: -40°C To +85°C
• Svhc: No SVHC (15-Dec-2010)
• Operating Temperature Max: 85°C
• Base Number: 90
• Data Rate: 100Mbps
• Rohs Compliant: Yes
• Supply Current: 12mA
• Driver Case Style: TSSOP
• Device Type: Driver / Receiver
• Filter Terminals: SMD
• Data Rate Max: 100Mbps
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DIFFERENTIAL DRIVER CHARACTERISTICS
V
V
I
I
I
DIFFERENTIAL RECEIVER CHARACTERISTICS
V
V
I
V
V
I
DEVICE CHARACTERISTICS
V
V
I
I
V
I
I
I
I
C
C
Symbol
Symbol
DRIVER TIMING REQUIREMENTS
t
t
t
t
t
OZD
OXD
OSD
OS
IN
IH
IL
CCD
CCR
CCZ
CC
PHLD
PLHD
SKD
TLH
THL
DC Electrical Characteristics
T
V
V
Note 1: “Absolute Maximum Ratings” are these beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device should
be operated at these limits. The table of “Electrical Characteristics” provides conditions for actual device operation.
Note 2: All currents into device pins are positive; all currents out of device pins are negative. All voltages are referenced to device ground unless otherwise specified.
Note 3: All typicals are given for V
Note 4: ESD Rating:
Note 5: C
Note 6: Generator waveforms for all tests unless otherwise specified; f = 1 MHz, Z
AC Electrical Characteristics
OD
OS
OH
OL
TH
TH
IH
IL
CL
T
D output
R input
A
OD
OS
A
= −40˚C to +85˚C unless otherwise noted, V
= −40˚C to +85˚C, V
HBM (1.5 k , 100 pF)
EIAJ (0 , 200 pF)
L
includes probe and fixture capacitance.
Output Differential Voltage
V
Offset Voltage
Offset Magnitude Change
TRI-STATE Leakage
Power-Off Leakage
Output Short Circuit Current
Voltage High
Voltage Output Low
Output Short Circuit Current
Input Threshold High
Input Threshold Low
Input Current
Minimum Input High Voltage
Maximum Input Low Voltage
Input High Current
Input Low Current
Input Diode Clamp Voltage
Power Supply Current
Capacitance
Capacitance
Differential Propagation Delay High to Low
Differential Propagation Delay Low to High
Differential Skew |t
Transition Time Low to High
Transition Time High to Low
OD
Magnitude Change
>
Parameter
200V.
>
2.0 kV
CC
= 3.3V
CC
Parameter
PHLD
= +3.3V or +5.0V and T
±
− t
0.3V. (Note 6)
PLHD
|
R
V
V
V
VID = +100 mV
Inputs Open
I
V
V
0V
V
V
I
DE = RE = V
DE = RE = 0V
DE = 0V, RE = V
DE = V
OL
CLAMP
OUT
OUT
OUT
OUT
IN
IN
IN
L
CC
= 2.0 mA, VID = −100 mV
= 100
= +2.4V or 0V, V
= V
= GND or 0.4V
A
= V
= 5.5V or GND, V
= 0V, DE = V
= 0V
= 5.0
= +25˚C, unless otherwise stated.
CC
CC
= −18 mA
CC
, RE = 0V
or 2.4 V
( Figure 1 )
±
Conditions
or GND, DE = 0V
CC
0.5V. (Notes 2, 3)
R
C
( Figure 2 and Figure 3 )
CC
L
L
3
I
CC
= 100 ,
= 10 pF
OH
CC
O
Conditions
= 50 , t
= −400 µA
CC
= 5.5V or
= 0V
r
= t
f
6.0 ns (0%–100%).
DE ,RE
DO+,
DO−
R
DO+,
DO−
RI+,
D
V
RI+,
Pin
RI−
RI−
OUT
CC
IN
,
Min
2.0
1.0
0.2
0.2
−150
−100
GND
−1.5
Min
−10
−10
−10
−15
250
4.3
4.3
2.0
1
Typ
4.0
5.6
0.4
0.7
0.8
1.25
−0.8
Typ
360
−75
5.0
5.0
0.1
5.8
4.5
±
±
±
±
±
−6
12
18
6
5
5
5
1
1
1
1
1
Max
6.5
7.0
1.0
3.0
3.0
+100
Max
V
450
+10
+10
−40
+15
±
±
1.8
0.4
0.8
8.5
60
60
−4
19
48
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8
CC
10
10
Units
Units
ns
ns
ns
ns
ns
mV
mV
mV
mA
mA
mV
mV
mA
mA
mA
mA
µA
µA
µA
µA
µA
pF
pF
V
V
V
V
V
V
V