NTE21128 NTE ELECTRONICS, NTE21128 Datasheet
NTE21128
Specifications of NTE21128
Related parts for NTE21128
NTE21128 Summary of contents
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... NMOS, 128K (16K EPROM Description: The NTE21128 is a 131,072 bit UV erasable and electrically programmable memory EPROM in a 28–Lead DIP type package organized as 16,384 words by 8 bits. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure ...
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DC Characteristics (Read Mode and Standby Mode Parameter Output High Voltage Output Low Voltage Input High Voltage Input Low Voltage Output Leakage Current Input Leakage Current V Current (Standby ...
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... A single 5V power supply is required in the read mode. All inputs are TTL levels except for V Read Mode The NTE21128 has the following two control functions: Chip Enable (E) is the power control used for device selection and Output Enable (G) is the output control used to gate data to the output pins, inde- pendent of device selection ...
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... PCB traces. Programming When delivered, all bits of the NTE21128 are in the “1” state. Data is introduced by selectively pro- gramming “0s” into the desired bit locations. Although only “0s” will be programmed, both “1s” and “0s” can be present in the data word. The only way to change a “0” “1” ultraviolet light erasure. ...
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... Device Operation (Cont’d): Program Inhibit Programming of multiple NTE21128s in parallel with different data is also easily accomplished. Ex- cept for E, all like inputs (including G) of the parallel NTE21128 may be common. A TTL low pulse applied to an NTE21128’s E input, with V inhibits the other NTE21128s from being programmed. ...
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Max .100 (2.54) Min ...