HY27UF082G2B-TPCB HYNIX SEMICONDUCTOR, HY27UF082G2B-TPCB Datasheet - Page 10

IC, MEMORY, FLASH NAND 2GB, TSOP48

HY27UF082G2B-TPCB

Manufacturer Part Number
HY27UF082G2B-TPCB
Description
IC, MEMORY, FLASH NAND 2GB, TSOP48
Manufacturer
HYNIX SEMICONDUCTOR
Datasheet

Specifications of HY27UF082G2B-TPCB

Access Time
20ns
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
0°C To +70°C
Package / Case
TSOP
Base Number
27
Interface
Serial
Logic
RoHS Compliant
Memory Type
Flash - NAND
Memory Configuration
256M X 8
Rohs Compliant
Yes

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Rev 0.2 / Jan. 2008
NOTE:
1. With the CE high during latency time does not stop the read operation
CLE
H
H
X
X
X
X
L
L
L
L
L
ALE
H
H
L
L
L
L
L
X
X
X
X
L
CE
H
(1)
X
X
X
L
L
L
L
L
L
Rising
Rising
Rising
Rising
Rising
WE
H
H
X
X
X
X
Table 6: Mode Selection
Falling
RE
H
H
H
H
H
H
X
X
X
X
0V/Vcc
WP
X
X
H
H
H
X
X
H
H
L
2Gbit (256Mx8bit) NAND Flash
HY27UF(08/16)2G2B Series
Read Mode
Write Mode
Data Input
Sequential Read and Data Output
During Read (Busy)
During Program (Busy)
During Erase (Busy)
Write Protect
Stand By
Command Input
Address Input(5 cycles)
Command Input
Address Input(5 cycles)
MODE
10

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