PIC18LF2682-I/SP Microchip Technology, PIC18LF2682-I/SP Datasheet - Page 432
![no-image](/images/manufacturer_photos/0/4/439/microchip_technology_sml.jpg)
PIC18LF2682-I/SP
Manufacturer Part Number
PIC18LF2682-I/SP
Description
80KB Flash, 3KB RAM, ECAN, 1024 EEPROM 28 SPDIP .300in TUBE
Manufacturer
Microchip Technology
Series
PIC® 18Fr
Datasheets
1.PCM18XT0.pdf
(484 pages)
2.PIC18F2221-ISO.pdf
(46 pages)
3.PIC18F2682-ISP.pdf
(6 pages)
4.PIC18F2682-ISP.pdf
(4 pages)
Specifications of PIC18LF2682-I/SP
Core Processor
PIC
Core Size
8-Bit
Speed
40MHz
Connectivity
CAN, I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Number Of I /o
25
Program Memory Size
80KB (40K x 16)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
3.25K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
28-DIP (0.300", 7.62mm)
Processor Series
PIC18LF
Core
PIC
Data Bus Width
8 bit
Data Ram Size
3.25 KB
Interface Type
EUSART, I2C, MSSP, SPI
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
28
Number Of Timers
4
Maximum Operating Temperature
+ 85 C
Mounting Style
Through Hole
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, DV164136
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
- PCM18XT0 PDF datasheet
- PIC18F2221-ISO PDF datasheet #2
- PIC18F2682-ISP PDF datasheet #3
- PIC18F2682-ISP PDF datasheet #4
- Current page: 432 of 484
- Download datasheet (9Mb)
PIC18F2682/2685/4682/4685
TABLE 27-1:
DS39761C-page 432
DC Characteristics
D110
D113
D120
D121
D122
D123
D124
D130
D131
D132
D132A V
D132B V
D133
D133A T
D133A T
D134
Note 1:
Param
No.
2:
3:
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
V
I
E
V
T
T
T
E
V
V
T
T
DDP
Sym
RETD
REF
IE
IW
IW
RETD
DEW
IE
IW
PP
D
DRW
P
PR
PEW
only and are not tested.
These specifications are for programming the on-chip program memory through the use of table write
instructions.
Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
Required only if Single-Supply Programming is disabled.
Internal Program Memory
Programming Specifications
Voltage on MCLR/V
Supply Current during
Programming
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program Flash Memory
Cell Endurance
V
V
V
or Write
V
ICSP™ Block Erase Cycle Time
ICSP Erase or Write Cycle Time
(externally timed)
Self-timed Write Cycle Time
Characteristic Retention
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
DD
DD
for Read/Write
for Read
for Block Erase
for Externally Timed Erase
for Self-timed Write
Characteristic
PP
/RE3 pin
(2)
(1)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
100K
V
V
V
9.00
Min
10K
1M
4.5
4.5
40
40
—
—
—
—
MIN
MIN
MIN
1
Typ†
100K
10M
100
1M
—
—
—
—
—
—
—
—
—
4
4
2
13.25
Max
5.5
5.5
5.5
5.5
5.5
10
—
—
—
—
—
—
—
—
—
Units
Year Provided no other
Year Provided no other
E/W -40°C to +85°C
E/W -40°C to +85°C
E/W -40°C to +85°C
mA
ms
ms
ms
ms
V
V
V
V
V
V
A
≤ +85°C for industrial
© 2009 Microchip Technology Inc.
(Note 3)
Using EECON to read/write
V
voltage
specifications are violated
V
voltage
Using ICSP™ port
Using ICSP port
V
voltage
V
V
specifications are violated
MIN
MIN
MIN
DD
DD
> 4.5V
> 4.5V
= Minimum operating
= Minimum operating
= Minimum operating
Conditions
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