S29GL064M11TFIR40 Spansion Inc., S29GL064M11TFIR40 Datasheet - Page 62

• Manufacturer Part Number: S29GL064M11TFIR40
• Description: Flash Memory IC
• Manufacturer: Spansion Inc.
• Series: S29GLr

Specifications of S29GL064M11TFIR40

• Memory Size: 64Mbit
• Package/case: 48-TSOP
• Supply Voltage Max: 3V
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Access Time, Tacc: 11nS
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Command Definitions
Reading Array Data
Reset Command
60
command returns the device to the erase-suspend-read mode. Once programming begins, how-
Writing specific address and data commands or sequences into the command register initiates
device operations.
incorrect address and data values or writing them in the improper sequence may place the device
in an unknown state. A reset command is then required to return the device to reading array data.
All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is
latched on the rising edge of WE# or CE#, whichever happens first. See
timing diagrams.
The device is automatically set to reading array data after device power-up. No commands are
required to retrieve data. The device is ready to read array data after completing an Embedded
Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the erase-suspend-read
mode, after which the system can read data from any non-erase-suspended sector. After com-
pleting a programming operation in the Erase Suspend mode, the system may once again read
array data with the same exception. See
information.
The system must issue the reset command to return the device to the read (or erase-suspend-
read) mode if DQ5 goes high during an active program or erase operation, or if the device is in
the autoselect mode. See the next section, Reset Command, for more information.
See also
formation. The Read-Only
Figure 13
Writing the reset command resets the device to the read or erase-suspend-read mode. Address
bits are don’t cares for this command.
The reset command may be written between the sequence cycles in an erase command sequence
before erasing begins. This resets the device to the read mode. Once erasure begins, however,
the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command se-
quence before programming begins. This resets the device to the read mode. If the program
command sequence is written while the device is in the Erase Suspend mode, writing the reset
ever, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in an autoselect command se-
quence. Once in the autoselect mode, the reset command must be written to return to the read
mode. If the device entered the autoselect mode while in the Erase Suspend mode, writing the
reset command returns the device to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation, writing the reset command returns the
device to the read mode (or erase-suspend-read mode if the device was in Erase Suspend).
Note that if DQ1 goes high during a Write Buffer Programming operation, the system must write
the Write-to-Buffer-Abort Reset command sequence to reset the device for the next operation.
Requirements for Reading Array Data
shows the timing diagram.
Table 34
S29GL-M MirrorBit
Operations–AC Characteristics
and
Table 35
D a t a
Erase Suspend/Erase Resume Commands
define the valid register command sequences. Writing
TM
Flash Family
in the Device Bus Operations section for more in-
S h e e t
provides the read parameters, and
AC Characteristics
S29GL-M_00_B8 February 7, 2007
for more
for